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onsemi PNP Power Transistor, Maximum 8 A Collector Current, 80 V Collector Emitter Voltage, 20 W Power MJD45H11-1G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 0.64mm |
| Length | 6.73mm |
| Model | MJD45H11-1G |
| Width | 2.38mm |
| Mount Type | Through Hole |
| Series | MJD44H11 |
| Maximum Operating Temperature | 150°C |
| Package Type | IPAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -80V |
| Minimum DC Current Gain hFE | 40 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 10V dc |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 20W |
| Maximum DC Collector Current Idc | -8A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 20MHz |
Key Features
- Supports maximum collector current of 8 amperes.
- Maximum collector-emitter voltage rating is 80 volts.
- Power dissipation capacity up to 20 watts for thermal stability.
- Minimum DC current gain is 40 ensuring good amplification.
- Operating temperature range from -55°C to 150°C for durability.
- Pin count of 3 in a compact IPAK package type.
- Designed for applications requiring PNP transistor polarity.
- Complies with automotive standard AEC-Q101 ensuring quality and reliability.
Product Description
onsemi MJD45H11-1G is a PNP power transistor offering a maximum collector current of 8 A and maximum collector-emitter voltage of 80 V. Housed in a 3-pin IPAK through-hole package, it facilitates easy PCB assembly and effective heat dissipation for industrial and automotive power electronics applications.
This transistor is optimized for robust performance with a power dissipation rating of 20 W and a minimum DC current gain of 40. Its wide operating temperature range from -55°C to 150°C and compliance with the automotive AEC-Q101 standard make it suitable for harsh environments and demanding systems.
The compact dimensions of 6.73 mm length, 2.38 mm width, and 0.64 mm height suit tight design constraints. It features a single transistor configuration with PNP polarity, a maximum collector-base voltage of 10 V DC, and a maximum emitter-base voltage of 5 V, making it adaptable for various switching and amplification tasks.
Applications include industrial power control, automotive motor drives, and energy management systems where reliability and efficiency are critical. Supports maximum collector current of 8 amperes. Maximum collector-emitter voltage rating is 80 volts.
Power dissipation capacity of 20 watts ensures thermal stability. Minimum DC current gain is 40 for amplification reliability. Wide operating temperature range from -55°C to 150°C. Package type IPAK with 3 pins for through-hole mounting.
PNP transistor polarity for specific circuit designs. Meets automotive AEC-Q101 standard for quality assurance. Single transistor configuration ideal for discrete applications. Maximum transition frequency of 20 MHz supports switching.
This Power Transistor from onsemi is engineered to meet high-demand power and control requirements in sectors like industrial automation, automotive electronics, HVAC systems, and other commercial uses. It ensures long-term reliability and efficient performance in complex electronic circuits.
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Frequently Asked Questions
The maximum collector current for the MJD45H11-1G is 8 A.
This model has a maximum collector-emitter voltage rating of 80 V.
It has a power dissipation capacity of up to 20 W.
The operating temperature range is from -55°C to 150°C.
The minimum DC current gain is 40, ensuring good amplification.
It is housed in a compact 3-pin IPAK package type.
The maximum transition frequency is 20 MHz.
The maximum emitter-base voltage (VEBO) is 5 V.
It is suitable for applications like industrial power control, automotive motor drives, and energy management systems.
The maximum collector-base voltage (VCBO) is 10 V DC.
Yes, it complies with the automotive standard AEC-Q101, ensuring quality and reliability.
This model has a pin count of 3.
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