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onsemi Power Transistor PNP, -4 A Max Collector Current, -350 V Max Collector-Emitter Voltage TO-220 MJE15035G

Category Power Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 30.02mm
Length 10.53mm
Model MJE15035G
Width 4.83mm
Mount Type Through Hole
Series MJE15035
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -350V
Minimum DC Current Gain hFE 10
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 350V
Maximum Power Dissipation Pd 50W
Maximum DC Collector Current Idc -4A
Transistor Configuration Single
Maximum Transition Frequency ft 30MHz
onsemi Transistor, -1 A PNP, -350 V, 3-Pin TO-220Brand onsemi

Key Features

  • This transistor is designed for high power switching and amplification applications.
  • It uses a PNP transistor configuration with single device construction.
  • Packaged in a standard TO-220 through-hole mount for easy PCB mounting.
  • Rated for a maximum power dissipation of 50 W suitable for industrial use.
  • Wide operating temperature range from -65°C to 150°C ensures reliability under harsh conditions.
  • Maximum transition frequency of 30 MHz supports fast switching circuits.
  • Minimum DC current gain (hFE) of 10 allows efficient amplification.
  • Pin count of 3 with robust mechanical dimensions of 30.02 mm height, 10.53 mm length, and 4.83 mm width.

Product Description

onsemi MJE15035G is a high-power PNP bipolar transistor designed for industrial and power electronics applications. It features a maximum collector current of -4 A and a collector-emitter voltage rating of -350 V. Packaged in a TO-220 3-pin configuration, this transistor supports through-hole mounting facilitating easy integration into power switching circuits.

The device offers a maximum power dissipation of 50 W, enabling it to handle significant power loads efficiently. Its single transistor configuration and PNP polarity make it suitable for a range of amplification and switching tasks in power management, industrial controls, and automotive electronics where high voltage and current ratings are required.

Operating temperatures range from -65°C to 150°C, ensuring stable performance in demanding environments. The transistor also supports a maximum transition frequency of 30 MHz, making it apt for applications requiring moderately fast switching.

Dimensionally, the MJE15035G measures 30.02 mm in height, 10.53 mm in length, and 4.83 mm in width, fitting standard PCB layouts for power transistors. The minimum DC current gain (hFE) of 10 ensures effective current amplification.

This transistor suits industrial power supplies, motor controls, and high voltage switching applications. Ideal for use in HVAC systems, manufacturing equipment, and other commercial electronics demanding robust Power Transistors.

Standard TO-220 packaging supports efficient heat dissipation and mounting. High reliability under varying temperatures makes it appropriate for automotive and harsh environment electronics. Suitable for both laboratory evaluation and large-scale industrial production.

Explore the onsemi range and other power semiconductors available at EnvMart for your electronic component needs.

onsemi Power Transistor PNP, -4 A Max Collector Current, -350 V Max Collector-Emitter Voltage TO-220 MJE15035G
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Frequently Asked Questions

The maximum collector current for the MJE15035G is -4 A.

This model has a maximum collector-emitter voltage rating of -350 V.

It is rated for a maximum power dissipation of 50 W.

The operating temperature range is from -65°C to 150°C.

The maximum transition frequency for the MJE15035G is 30 MHz.

The minimum DC current gain (hFE) is 10.

It is packaged in a standard TO-220 through-hole mount.

This model has a pin count of 3.

The dimensions are 30.02 mm in height, 10.53 mm in length, and 4.83 mm in width.

It is suitable for industrial power supplies, motor controls, and high voltage switching applications.

The MJE15035G uses a single PNP transistor configuration.

The country of origin for the MJE15035G is India.

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