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onsemi PNP Power Transistor, Maximum DC Collector Current -10 A, Maximum Collector Emitter Voltage -80 V, 3-Pin D45H11G

Category Power Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 30.02mm
Length 10.53mm
Model D45H11G
Width 4.83mm
Mount Type Through Hole
Series D45H
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -80V
Minimum DC Current Gain hFE 40
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Power Dissipation Pd 2W
Maximum DC Collector Current Idc -10A
Transistor Configuration Single
Maximum Transition Frequency ft 40MHz
STMicroelectronics Transistor, 20 A PNP, 80 V, 3-Pin TO-220Brand STMicroelectronics

Key Features

  • High maximum DC collector current rating of 10 A for demanding applications.
  • Collector emitter voltage rating up to 80 V enhances circuit reliability.
  • Compact 3-pin TO-220 through-hole package allows efficient mounting.
  • Maximum power dissipation capacity of 2 W for thermal stability.
  • Wide operating temperature range from -55°C to 150°C.
  • Minimum DC current gain (hFE) of 40 ensures effective transistor operation.
  • Maximum transition frequency of 40 MHz suitable for high-speed circuits.
  • Robust transistor polarity with PNP configuration for power management.

Product Description

onsemi D45H11G PNP Power Transistor is a high-performance bipolar transistor designed for power applications requiring reliable current and voltage handling capabilities. It supports a maximum DC collector current of 10 A and a maximum collector emitter voltage of 80 V, making it suitable for industrial, automotive, and electronic power switching circuits.

This transistor is housed in a 3-pin TO-220 through-hole package, enabling efficient heat dissipation and straightforward PCB mounting for a wide range of applications including power management, motor control, and amplification tasks.

The device features a maximum power dissipation of 2 watts, allowing stable operation under moderate power loads. It operates reliably across a broad temperature range from -55°C up to 150°C, suitable for harsh environmental conditions encountered in industrial and automotive fields.

The D45H11G model guarantees a minimum DC current gain (hFE) of 40, which ensures robust transistor switching and amplification. It also offers a maximum transition frequency of 40 MHz, enabling it to work efficiently in circuits requiring fast switching.

Physical dimensions of this transistor are standardized with a height of 30.02 mm, width of 4.83 mm, and length of 10.53 mm. This form factor balances between compactness and power handling requirements.

High max collector current of 10 A for demanding loads. Wide voltage rating up to 80 V for versatile usage. 3-pin TO-220 package for thermal and mechanical convenience. Power dissipation up to 2 W for durable performance.

Extended operating temperature -55°C to 150°C for reliability. Minimum DC current gain of 40 for consistent transistor operation. Max transition frequency of 40 MHz for high-speed switching. PNP transistor suitable for power switching and amplification.

Compact dimensions optimize PCB space and thermal management. Single configuration discrete transistor for precise control.

This transistor is widely applicable in industrial electronics, power supply design, automotive electronics, HVAC systems, and manufacturing process control. Its robust electrical and mechanical properties make it a reliable component in power transistor applications.

Explore the Electronics & Electricals category on EnvMart for a comprehensive selection of Power Transistors and complementary semiconductor devices for your project or industrial needs.

onsemi PNP Power Transistor, Maximum DC Collector Current -10 A, Maximum Collector Emitter Voltage -80 V, 3-Pin D45H11G
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Frequently Asked Questions

The maximum DC collector current for this model is -10 A, making it suitable for demanding applications.

This transistor has a maximum collector emitter voltage rating of -80 V, enhancing its reliability in various circuits.

It is housed in a compact 3-pin TO-220 through-hole package, which allows for efficient mounting and heat dissipation.

The maximum power dissipation capacity is 2 W, which contributes to its thermal stability during operation.

The operating temperature range is from -55°C to 150°C, making it suitable for harsh environmental conditions.

The minimum DC current gain (hFE) is 40, ensuring effective transistor operation for switching and amplification.

The maximum transition frequency is 40 MHz, allowing it to perform efficiently in high-speed circuits.

The dimensions are 30.02 mm in height, 4.83 mm in width, and 10.53 mm in length.

This model features a PNP configuration, which is suitable for power management applications.

It is widely applicable in industrial electronics, power supply design, automotive electronics, HVAC systems, and manufacturing process control.

This transistor supports through-hole mounting, facilitating straightforward PCB installation.

The country of origin for this power transistor is India.

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