ROHM Dual PNP Bipolar Transistor, -150 mA Collector Current, -50 V Collector Emitter Voltage, 6-Pin UMT Package UMT1NTN

ROHM UMT1NTN is a dual PNP bipolar transistor integrated into a 6-pin UMT surface mount package designed for reliable operation in low power electronic applications requiring up to -150 mA collector current and -50 V collector emitter voltage.

The transistor features an isolated configuration which facilitates its use in circuits requiring minimal interference between the two transistors in the package. It supports a maximum collector base voltage of 60 V and has a maximum power dissipation of 150 mW, ensuring stable performance within these parameters.

With a maximum transition frequency of 140 MHz and durability to operate up to 150°C, this component is suited for high-frequency applications and environments requiring robust thermal tolerance.

Its compact footprint of 1.6 mm length by 1.2 mm width and 0.5 mm height enables space-saving in PCB layouts, while surface mount technology simplifies assembly in modern electronic manufacturing.

The product complies with RoHS environmental standards and is manufactured in the Philippines, under the ROHM brand known for quality semiconductor devices. Dual bipolar transistors integrated in one package. Maximum collector current of -150 mA.

Collector emitter voltage rating of -50 V. Surface mount 6-pin UMT package. Operating temperature up to 150°C. Maximum transition frequency of 140 MHz. RoHS compliant and quality manufactured.

This ROHM transistor UMT1NTN is ideal for use in a broad range of industrial, consumer electronics, and communication applications where compact, reliable low-power PNP transistors are required. Explore other high-quality ROHM Bipolar Transistors and semiconductor components in the EnvMart catalog.