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Infineon Gate Driver Module 14 A Output Current 8-Pin 17V PG-DSO-8 1ED3123MU12HXUMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | 1ED3123MU12HXUMA1 |
| Output Current | 14A |
| Maximum Operating Temperature | 150°C |
| Package Type | PG-DSO-8 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | DIN EN 60747-5-2 |
| Pin Count | 8 |
| Maximum Supply Voltage | 17V |
| Minimum Supply Voltage | 3.1V |
| Fall Time | 30ns |
| Driver Type | Gate Driver |
Key Features
- This gate driver module supports a fast fall time of 30 nanoseconds.
- Operates within a supply voltage range of 3.1V to 17V for versatile applications.
- Designed for temperatures ranging from -40°C to 150°C suitable for industrial environments.
- The PG-DSO-8 package ensures compact surface mount technology integration.
- Galvanically isolated single channel, ideal for driving IGBT, MOSFET, and SiC MOSFET components.
- Applicable in fast EV charging systems, motor control and drives, server power supplies, and solar energy systems.
- Complies with DIN EN 60747-5-2 standard ensuring reliable industrial performance.
- Offers dedicated separate source and sink outputs for improved driving capabilities.
Product Description
Infineon 1ED3123MU12HXUMA1 is a high-performance gate driver module designed for industrial applications requiring precise and robust switching control. It supports an output current of 14 A and comes in an 8-pin PG-DSO-8 surface mount package, which is optimized for space-saving PCB designs.
Operating reliably across a wide voltage range from 3.1V to 17V and suitable for temperatures between -40°C and 150°C, this module is well-suited for harsh environments found in automotive, industrial, and energy sectors.
The device provides galvanic isolation and separate source and sink outputs, which enhances switching performance for IGBT, MOSFET, and SiC MOSFET transistors. Its fast fall time of 30 nanoseconds contributes to efficient switching and reduced losses.
Typical industrial use cases include fast electric vehicle (EV) charging systems, motor controls and drives, server power supplies, photovoltaic solar energy solutions, and uninterruptible power supplies (UPS). Adherence to the DIN EN 60747-5-2 standard validates its quality and performance reliability.
This gate driver module offers galvanic isolation for robust electrical performance. Fast switching enabled by a 30ns fall time enhances efficiency. Temperature tolerance from -40°C to 150°C ensures stability in diverse conditions.
Surface mount PG-DSO-8 package facilitates compact integration. Separate source and sink outputs optimize drive capability. Ideal for industrial applications including motor drives, EV charging, and solar systems. Conforms to DIN EN 60747-5-2 certification standards.
Explore other power management and Gate Driver modules in our Electronics & Electricals catalog to enhance your industrial system capabilities.
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Frequently Asked Questions
The output current of this gate driver module is 14 A.
It operates within a supply voltage range of 3.1V to 17V.
The fall time of this module is 30 nanoseconds, contributing to efficient switching.
This model is designed to operate within a temperature range of -40°C to 150°C.
It comes in an 8-pin PG-DSO-8 surface mount package, optimized for compact integration.
This unit complies with the DIN EN 60747-5-2 standard, ensuring reliable industrial performance.
It is suitable for driving IGBT, MOSFET, and SiC MOSFET components.
Typical applications include fast electric vehicle (EV) charging systems, motor controls, server power supplies, and solar energy systems.
Yes, it features galvanic isolation, enhancing electrical performance and safety.
Key features include a fast fall time of 30 ns, a wide supply voltage range, and separate source and sink outputs for improved driving capabilities.
This gate driver module has a pin count of 8.
The country of origin for this gate driver module is India.
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