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| Country of Origin | Malaysia |
|---|---|
| Diameter | 3.53mm |
| Brand | STMicroelectronics |
| Height | 3.53mm |
| Length | 6.75mm |
| Model | BZW04-376BRL |
| Width | 3.53mm |
| Mount Type | Through Hole |
| Series | BZW04 |
| Maximum Operating Temperature | 175°C |
| Package Type | DO-15 |
| Pin Count | 2 |
| Number of Elements per Chip | 1 |
| Clamping Voltage VC | 776V |
| Diode Configuration | Single |
| Direction Type | Bi-Directional |
| Minimum Breakdown Voltage Vbr | 418V |
| Maximum Reverse Stand-off Voltage Vwm | 376V |
| Peak Pulse Power Dissipation Pppm | 400W |
| Test Current It | 1mA |
| Maximum Peak Pulse Current Ippm | 3A |
| Maximum Reverse Leakage Current | 1μA |
STMicroelectronics BZW04-376BRL is a 1-element bi-directional Transient Voltage Suppressor (TVS) diode engineered to protect sensitive electronics from voltage transients and surges. It offers a peak pulse power dissipation of 400 W enabling efficient absorption of transient energy spikes, safeguarding critical components.
This diode features a single, bi-directional configuration typical of Transil™ devices, making it suitable for AC and DC transient suppression applications. The compact 2-pin DO-15 through-hole package facilitates easy PCB mounting while maintaining compact footprint, measuring 6.75 mm in length and 3.53 mm in diameter.
Electrical characteristics include a minimum breakdown voltage (Vbr) of 418 V and a maximum reverse standoff voltage (Vwm) of 376 V, protecting circuits against overvoltage conditions. The device clamps transient voltages at 776 V and supports a maximum peak pulse current (Ippm) of 3 A with a test current (It) of 1 mA for precise triggering.
This component exhibits a low maximum reverse leakage current of 1 μA which contributes to energy efficiency and circuit reliability. It is rated for a maximum operating temperature of 175°C, suitable for industrial product designs demanding high thermal endurance.
Applications for this TVS diode include power supply protection, industrial electronics, telecommunications equipment, automotive electronics, and electronic devices requiring robust surge suppression. Its construction and performance align with rigorous manufacturing standards and ensure long-term operational reliability.
The diode is manufactured in Malaysia, reflecting strong quality control and process standards of STMicroelectronics products. This TVS Diode features a bi-directional diode configuration suitable for protecting circuits against voltage spikes.
The device has a minimum breakdown voltage of 418 volts and a maximum reverse stand-off voltage of 376 volts. It supports a peak pulse power dissipation of 400 watts and a clamping voltage of 776 volts for transient event protection.
The diode operates with a maximum peak pulse current of 3 amperes and a test current of 1 milliampere. Designed for through-hole mounting with a robust DO-15 package style, dimensions are 6.75 mm in length and 3.53 mm in diameter.
The maximum operating temperature tolerance is 175°C, ensuring reliable performance in demanding environments. This component has a low maximum reverse leakage current of 1 microampere, ideal for conserving power and preventing leakage failures.
It contains a single element per chip and is suitable for a variety of industrial, electronics manufacturing, and power protection applications. Its country of origin is Malaysia, ensuring high manufacturing quality standards.
Explore more semiconductors at EnvMart for reliable electronic components and robust transient protection solutions.
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