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Infineon N-Channel IGBT 25 A 1200 V 3-Pin TO-247 Through Hole IGW25N120H3FKSA1

Category Power Semiconductor Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IGW25N120H3FKSA1
Mount Type Through Hole
Series TrenchStop
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -40°C
Standards/Approvals JEDEC, RoHS
Pin Count 3
Maximum Continuous Collector Current Ic 25A
Maximum Collector Emitter Voltage Vceo 1200V
Maximum Collector Emitter Saturation Voltage VceSAT 2.05V
Channel Type N
Maximum Power Dissipation Pd 326W
Maximum Gate Emitter Voltage VGEO ±20 V

Key Features

  • This IGBT features a 3-pin TO-247 package with through-hole mount design.
  • Maximum continuous collector current is rated at 25 amperes.
  • Collector-emitter voltage maximum rating is 1200 volts.
  • Power dissipation is up to 326 watts under maximum operating conditions.
  • It supports fast switching with a speed of up to 1 MHz.
  • Maximum operating temperature is 175°C enabling industrial reliability.
  • Gate emitter voltage can safely withstand ±20 volts.
  • Infineon TrenchStop technology ensures low saturation voltage and low turn-off losses.

Product Description

Infineon IGW25N120H3FKSA1 is a high-performance N-Channel insulated gate bipolar transistor (IGBT) designed for industrial and electronic power applications. Operating at a maximum collector current of 25 amperes and a collector-emitter voltage of 1200 volts, this device is built in a 3-pin TO-247 package configured for through-hole mounting.

This IGBT utilizes Infineon's TrenchStop technology, delivering low collector-emitter saturation voltage (2.05 V max) and minimal turn-off losses, making it efficient for switching and power conversion systems.

It supports switching speeds up to 1 MHz and can function reliably in environments with temperatures ranging from -40°C to a maximum junction temperature of 175°C, making it suitable for demanding industrial, HVAC, manufacturing, and power management applications.

The device includes a robust gate-emitter voltage tolerance of ±20 V and features a 3-pin configuration optimized for easy integration in discrete semiconductor circuits. Compliance with JEDEC and RoHS standards assures quality and environmental safety.

This IGBT features a 3-pin TO-247 package with through-hole mount design. Maximum continuous collector current is rated at 25 amperes. Collector-emitter voltage maximum rating is 1200 volts. Power dissipation is up to 326 watts under maximum operating conditions.

It supports fast switching with a speed of up to 1 MHz. Maximum operating temperature is 175°C enabling industrial reliability. Gate emitter voltage can safely withstand ±20 volts. Infineon TrenchStop technology ensures low saturation voltage and low turn-off losses.

Complies with JEDEC and RoHS standards for quality and environmental compliance.

This N-Channel IGBT is widely used in power electronics sectors including industrial power control, motor drives, HVAC systems, renewable energy inverters, and other high power switching applications.

Explore more Power Semiconductor devices and related components at EnvMart.

Infineon N-Channel IGBT 25 A 1200 V 3-Pin TO-247 Through Hole IGW25N120H3FKSA1
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Frequently Asked Questions

The maximum continuous collector current for this IGBT is rated at 25 amperes.

The maximum collector-emitter voltage rating is 1200 volts.

It can handle power dissipation of up to 326 watts under maximum operating conditions.

The maximum operating temperature is 175°C, allowing for industrial reliability.

This IGBT supports fast switching speeds of up to 1 MHz.

It features a through-hole mount design in a 3-pin TO-247 package.

It complies with JEDEC and RoHS standards for quality and environmental safety.

The gate-emitter voltage can safely withstand ±20 volts.

The minimum operating temperature is -40°C.

It is suitable for applications in industrial power control, motor drives, HVAC systems, and renewable energy inverters.

It utilizes Infineon's TrenchStop technology, which ensures low saturation voltage and minimal turn-off losses.

This IGBT has a 3-pin configuration, optimized for easy integration in discrete semiconductor circuits.

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