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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IGW25N120H3FKSA1 |
| Mount Type | Through Hole |
| Series | TrenchStop |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | JEDEC, RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 25A |
| Maximum Collector Emitter Voltage Vceo | 1200V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.05V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 326W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
Infineon IGW25N120H3FKSA1 is a high-performance N-Channel insulated gate bipolar transistor (IGBT) designed for industrial and electronic power applications. Operating at a maximum collector current of 25 amperes and a collector-emitter voltage of 1200 volts, this device is built in a 3-pin TO-247 package configured for through-hole mounting.
This IGBT utilizes Infineon's TrenchStop technology, delivering low collector-emitter saturation voltage (2.05 V max) and minimal turn-off losses, making it efficient for switching and power conversion systems.
It supports switching speeds up to 1 MHz and can function reliably in environments with temperatures ranging from -40°C to a maximum junction temperature of 175°C, making it suitable for demanding industrial, HVAC, manufacturing, and power management applications.
The device includes a robust gate-emitter voltage tolerance of ±20 V and features a 3-pin configuration optimized for easy integration in discrete semiconductor circuits. Compliance with JEDEC and RoHS standards assures quality and environmental safety.
This IGBT features a 3-pin TO-247 package with through-hole mount design. Maximum continuous collector current is rated at 25 amperes. Collector-emitter voltage maximum rating is 1200 volts. Power dissipation is up to 326 watts under maximum operating conditions.
It supports fast switching with a speed of up to 1 MHz. Maximum operating temperature is 175°C enabling industrial reliability. Gate emitter voltage can safely withstand ±20 volts. Infineon TrenchStop technology ensures low saturation voltage and low turn-off losses.
Complies with JEDEC and RoHS standards for quality and environmental compliance.
This N-Channel IGBT is widely used in power electronics sectors including industrial power control, motor drives, HVAC systems, renewable energy inverters, and other high power switching applications.
Explore more Power Semiconductor devices and related components at EnvMart.
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