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Vishay N-Channel Power MOSFET, 20 A, 850 V, TO-247AC Package, Through Hole Mount SIHG24N80AEF-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SIHG24N80AEF-GE3 |
| Mount Type | Through Hole |
| Series | SIH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247AC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 850V |
| Maximum Drain Source Resistance Rds | 0.17Ω |
| Maximum Power Dissipation Pd | 208W |
| Typical Gate Charge Qg @ Vgs | 60nC |
| Maximum Gate Source Voltage Vgs | 30V |
Key Features
- Supports a maximum continuous drain current of 20 amperes suitable for high power applications.
- High maximum drain-source voltage rating of 850 volts for robust switching.
- Low drain-source resistance of 0.17 ohms reduces conduction losses.
- Typical gate charge of 60 nanocoulombs ensures efficient switching performance.
- Maximum power dissipation capability of 208 watts for high load tolerance.
- Wide operating temperature range from -55°C to 150°C for reliability under harsh conditions.
- Maximum gate-source voltage rating of ±30 volts to protect gate oxide integrity.
- Compliant with RoHS standards for environmentally responsible use.
Product Description
Vishay SIHG24N80AEF-GE3 is an N-Channel Power MOSFET designed for high power applications requiring up to 20 A continuous drain current and a maximum drain-source voltage of 850 V. Packaged in a TO-247AC form factor, it supports through-hole mounting that is compatible with a wide range of power supply designs.
This MOSFET features a low figure-of-merit (FOM) with minimal on-resistance (0.17 ohms) combined with a typical gate charge of 60 nC resulting in reduced conduction and switching losses. It is capable of dissipating up to 208 W of power, making it suitable for demanding industrial environments including server and telecom power supply units, switch mode power supplies (SMPS), and power factor correction circuits.
The device maintains stable operation across a wide temperature range, from -55°C to 150°C, and offers a gate-source voltage tolerance of ±30 V, ensuring protection during voltage spikes. It complies with the Restriction of Hazardous Substances (RoHS) directive, emphasizing environmentally safe manufacturing practices.
Constructed with emphasis on reliability and efficiency, the SIHG24N80AEF-GE3 MOSFET is a dependable choice for engineers seeking effective power switching solutions in industrial, telecommunications, computing, and power management sectors.
Supports a maximum continuous drain current of 20 amperes suitable for high power applications. High maximum drain-source voltage rating of 850 volts for robust switching. Low drain-source resistance of 0.17 ohms reduces conduction losses.
Typical gate charge of 60 nanocoulombs ensures efficient switching performance. Maximum power dissipation capability of 208 watts for high load tolerance. Wide operating temperature range from -55°C to 150°C for reliability under harsh conditions.
Maximum gate-source voltage rating of ±30 volts to protect gate oxide integrity. Compliant with RoHS standards for environmentally responsible use. Designed primarily for server, telecom power supplies, switch mode power supplies (SMPS), and power factor correction applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 20 amperes, making it suitable for high power applications.
This MOSFET has a maximum drain-source voltage rating of 850 volts, which supports robust switching capabilities.
The drain-source resistance is 0.17 ohms, which helps reduce conduction losses during operation.
The typical gate charge is 60 nanocoulombs, ensuring efficient switching performance.
It can dissipate up to 208 watts, allowing for high load tolerance in demanding applications.
The operating temperature range is from -55°C to 150°C, providing reliability under harsh conditions.
The maximum gate-source voltage rating is ±30 volts, which helps protect the gate oxide integrity.
It is designed for through-hole mounting, compatible with a variety of power supply designs.
This model comes in a TO-247AC package type, suitable for various applications.
Yes, it is compliant with RoHS standards, emphasizing environmentally responsible manufacturing practices.
It is designed primarily for server and telecom power supplies, switch mode power supplies (SMPS), and power factor correction applications.
The country of origin for this model is India.
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