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Infineon MOSFET Gate Driver 2 Outputs -1 A 18-Pin SOIC 18V 2ED020I12FIXUMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.45mm |
| Length | 12.8mm |
| Model | 2ED020I12FIXUMA1 |
| Width | 7.6mm |
| Mount Type | Surface |
| Series | 2ED020I12FI |
| Output Current | -1A |
| Maximum Operating Temperature | 125°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -40°C |
| Number of outputs | 2 |
| Rise Time | 30ns |
| Pin Count | 18 |
| Minimum Supply Voltage | 18V |
| Number of Drivers | 2 |
| Fall Time | 25ns |
| Driver Type | MOSFET |
Key Features
- Compact half bridge driver family for power device enable and disable functions.
- Device features over voltage protection and active shutdown for safety.
- Operates between -40°C and 125°C for industrial and automotive applications.
- Equipped with ultra-fast bootstrap diode and off-line gate clamping function.
- Level shifter silicon on insulator technology with bootstrap diode integrated.
- Driver type is MOSFET with two outputs and two drivers.
- Moderate rise and fall times of 30ns and 25ns respectively ensure efficient switching.
- Surface mount package with dimensions 12.8mm length, 7.6mm width, and 2.45mm height.
Product Description
Infineon 2ED020I12FIXUMA1 is a MOSFET gate driver IC designed as a compact 600V half bridge driver family. It delivers a current of -1 A to enable and disable power devices with reliable performance in industrial and consumer electrical applications.
The IC features an 18-pin SOIC surface mount package measuring 12.8mm in length, 7.6mm in width, and 2.45mm in height, designed for efficient PCB assembly. This gate driver includes advanced functionality such as over voltage protection, active shutdown, and off-line gate clamping to protect the system and increase reliability.
Based on level shift silicon on insulator (SOI) technology, it integrates a bootstrap diode for fast switching and stable operation. Its typical rise and fall times are 30ns and 25ns respectively, ensuring efficient control of MOSFETs.
The device operates reliably over a wide temperature range from -40°C to 125°C, making it suitable for demanding environments but it does not comply with automotive standards.
Its dual output and driver configuration simplify integration in half bridge circuits. This product is ideal for use in power management IC applications, consumer electronics, and home appliances requiring isolated gate drive.
Compact half bridge MOSFET Gate Driver IC for industrial use. Includes built-in protection and shutdown features for enhanced safety. Wide temperature range suited for varied applications including consumer electronics. Surface mount 18-pin SOIC package for easy PCB assembly.
Fast switching enabled by integrated bootstrap diode and controlled rise/fall times. Operating voltage fixed at 18V supply with -1A output current capacity. MOSFET driver type with 2 outputs and 2 drivers per IC. Discover more power and semiconductor components at EnvMart for your industrial and electronic projects.
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Frequently Asked Questions
This model has an output current capacity of -1 A.
It operates reliably within a temperature range of -40°C to 125°C.
The dimensions of this surface mount package are 12.8mm in length, 7.6mm in width, and 2.45mm in height.
This model features two outputs and two drivers per IC.
It comes in an 18-pin SOIC surface mount package.
The typical rise time is 30ns and the fall time is 25ns.
Yes, it includes over voltage protection, active shutdown, and off-line gate clamping for enhanced safety.
The minimum supply voltage for this gate driver is 18V.
It utilizes level shift silicon on insulator (SOI) technology with an integrated bootstrap diode for fast switching.
No, this model does not comply with automotive standards despite its wide operating temperature range.
This model is part of the 2ED020I12FI series of MOSFET gate drivers.
It is suitable for power management IC applications, consumer electronics, and home appliances requiring isolated gate drive.
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