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Infineon MOSFET Gate Driver 18-Pin SOIC 18V 2 Outputs -1 A Output Current 2ED020I12FIXUMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.45mm |
| Length | 12.8mm |
| Model | 2ED020I12FIXUMA1 |
| Width | 7.6mm |
| Mount Type | Surface |
| Series | 2ED020I12FI |
| Output Current | -1A |
| Maximum Operating Temperature | 125°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -40°C |
| Number of outputs | 2 |
| Rise Time | 30ns |
| Pin Count | 18 |
| Minimum Supply Voltage | 18V |
| Number of Drivers | 2 |
| Fall Time | 25ns |
| Driver Type | MOSFET |
Key Features
- This device features two outputs to drive MOSFETs efficiently.
- It provides fast switching times with 25 ns fall time and 30 ns rise time.
- Designed for operation from -40°C to 125°C temperature range.
- Includes advanced features such as overvoltage protection and active shutdown.
- Utilizes SOI technology improving isolation and driver performance.
- Compact dimensions of 12.8 mm length, 7.6 mm width, and 2.45 mm height.
- Suitable for motor control, industrial, and power management applications.
- The surface mount package simplifies PCB assembly and integration.
Product Description
Infineon 2ED020I12FIXUMA1 MOSFET Gate Driver is a dual driver IC designed to provide efficient gate drive for MOSFET power devices. Operating at 18 V supply voltage with -1 A output current capability per channel, it ensures rapid switching with 25 ns fall time and 30 ns rise time. The device is housed in an 18-pin SOIC package measuring 12.8 mm by 7.6 mm by 2.45 mm for compactness and ease of PCB mounting.
Based on Silicon on Insulator (SOI) technology, this gate driver features level shifting and bootstrap diodes to support high voltage MOSFET applications. It includes protections such as overvoltage, active shutdown, and under voltage lockout to maintain reliable operation under varying conditions.
The operating temperature range of -40°C to 125°C enables usage in demanding industrial environments while the isolated half-bridge design is suitable for motor control, power management, and industrial automation systems.
The device supports advanced functions like current over-limit detection and individual control circuits for each channel, making it versatile for integration in complex electronic systems requiring precise power switching.
This gate driver IC is ideal for industrial, power management, and consumer home appliance applications where efficient power device drive is critical. The surface-mount SOIC package supports automated assembly and high-density PCB designs.
Its compact size and enhanced features reduce system complexity and improve reliability. Enables higher efficiency and improved switching performance in power electronics designs. Supports isolated MOSFET and IGBT power device control up to 600 V.
Explore more Infineon gate drivers and power management ICs in the Electronics & Electricals category on EnvMart for reliable industrial solutions.
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Frequently Asked Questions
This MOSFET gate driver has an output current capability of -1 A per channel.
It operates within a temperature range of -40°C to 125°C, making it suitable for demanding industrial environments.
The dimensions of this model are 12.8 mm in length, 7.6 mm in width, and 2.45 mm in height.
The rise time is 30 ns and the fall time is 25 ns, enabling rapid switching performance.
This gate driver features two outputs for driving MOSFETs efficiently.
It is housed in an 18-pin SOIC (Small Outline Integrated Circuit) package, which facilitates surface mounting.
Yes, it includes protections such as overvoltage protection, active shutdown, and under voltage lockout.
This device utilizes Silicon on Insulator (SOI) technology, which enhances isolation and driver performance.
It is suitable for applications in motor control, power management, and industrial automation systems.
The minimum supply voltage required is 18 V.
It supports high voltage MOSFET applications through its level shifting and bootstrap diodes.
This device has a pin count of 18.
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