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ROHM Bipolar Transistor PNP 3-Pin SOT-323 -500 mA -32 V Maximum Collector Emitter Voltage 2SA1577T106Q

Category Bipolar Transistors Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Height 1mm
Length 2.1mm
Model 2SA1577T106Q
Width 1.35mm
Mount Type Surface
Series 2SA1577T
Maximum Operating Temperature 150°C
Package Type SOT-323
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -32V
Minimum DC Current Gain hFE 120
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -40V
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc -500mA

Key Features

  • Compact 3-pin SOT-323 package suitable for surface mounting.
  • Maximum DC collector current of -500 mA allowing moderate current applications.
  • Maximum power dissipation of 200 mW suitable for medium power applications.
  • Operates reliably in temperature range from -55°C to 150°C.
  • Minimum DC current gain (hFE) of 120 ensuring efficient amplification.
  • Designed primarily for general purpose small signal amplification.
  • Package dimensions approximately 2.1 mm length, 1.35 mm width, and 1 mm height.

Product Description

The ROHM 2SA1577T106Q is a medium power PNP bipolar transistor designed in a small 3-pin SOT-323 surface mount package. It features a maximum DC collector current of -500 mA and a maximum collector emitter voltage of -32 V, making it ideal for general purpose small signal amplifier applications in low voltage circuits.

This transistor can reliably operate within a broad temperature range from -55°C minimum to 150°C maximum, supporting stable performance in various industrial and electronic environments. Its power dissipation rating of 200 mW suits medium power needs typically encountered in electronic components, power connectors, and semiconductor discrete devices.

The device's electrical characteristics include a minimum DC current gain (hFE) of 120, a maximum collector-base voltage rating of -40 V, and a maximum emitter-base voltage rating of -5 V, thus providing efficient amplification capacity for signal control applications.

The compact physical dimensions of length 2.1 mm, width 1.35 mm, and height 1 mm allow for dense packing on printed circuit boards (PCBs), making it suitable for space-saving electronic designs across sectors such as industrial automation, telecommunications, instrumentation, and consumer electronics.

This bipolar transistor is a standard component within the ROHM 2SA1577T series and complies with no specific automotive standards but adheres to standard semiconductor quality for general industrial use.

Compact 3-pin SOT-323 package suitable for surface mounting. Maximum DC collector current of -500 mA allowing moderate current applications. Voltage ratings: collector emitter -32 V, collector base -40 V, emitter base -5 V.

Maximum power dissipation of 200 mW suitable for medium power applications. Operates reliably in temperature range from -55°C to 150°C. Minimum DC current gain (hFE) of 120 ensuring efficient amplification. Designed primarily for general purpose small signal amplification.

Package dimensions approximately 2.1 mm length, 1.35 mm width, and 1 mm height. This ROHM bipolar transistor 2SA1577T106Q is ideal for industrial, laboratory, electronic assembly, telecommunications, and consumer electronics manufacturing applications.

Explore the comprehensive selection of Bipolar Transistors and other discrete semiconductors available at EnvMart to find the best suited components for your electronic circuit designs and power control solutions.

ROHM Bipolar Transistor PNP 3-Pin SOT-323 -500 mA -32 V Maximum Collector Emitter Voltage 2SA1577T106Q
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Frequently Asked Questions

The maximum DC collector current for this model is -500 mA, allowing it to handle moderate current applications.

This transistor operates reliably within a temperature range from -55°C to 150°C.

The package dimensions are approximately 2.1 mm in length, 1.35 mm in width, and 1 mm in height.

The maximum collector-emitter voltage rating for this transistor is -32 V.

The minimum DC current gain (hFE) is 120, which ensures efficient amplification.

This model is designed for surface mounting.

The maximum power dissipation for this transistor is 200 mW, suitable for medium power applications.

The maximum collector-base voltage rating is -40 V.

It is primarily designed for general purpose small signal amplification in low voltage circuits.

The maximum emitter-base voltage rating for this transistor is -5 V.

This model is part of the ROHM 2SA1577T series.

The country of origin for this product is India.

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