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ROHM 940 nm IR Emitting Diode 8.4mW/sr Radiant Intensity DIP Through Hole Package SIR-341ST3F
Specifications
| Country of Origin | Japan |
|---|---|
| Brand | ROHM |
| Model | SIR-341ST3F |
| Packaging | Bulk |
| Mount Type | Through Hole |
| Number Of Leds | 1 |
| Package Type | DIP |
| Number of Pins | 2 |
| Lens Shape | Round |
| Maximum Supply Voltage | 1.5V |
| Peak Wavelength | 940nm |
| LED Material | GaAs |
| Angle of half intensity | 16° |
| Radiant Intensity | 8.4mW/sr |
Key Features
- Operates at a peak wavelength of 940 nm for infrared applications.
- Designed with a DIP package suitable for through hole mounting.
- Radiant intensity of 8.4mW/sr ensures strong IR emission.
- Compact round lens shape with GaAs LED material for efficient performance.
- Supports a maximum supply voltage of 1.5V for low power operation.
- Includes one LED with two pins for easy circuit integration.
- Bulk packaging ideal for volume manufacturing.
- Manufactured in Japan ensuring high quality and reliability.
Product Description
ROHM SIR-341ST3F is a high-quality IR emitting diode designed for infrared light applications, housed in a DIP through-hole package. It operates at a peak wavelength of 940 nm, making it suitable for remote controls, optical sensors, and other IR communication devices. The diode provides a radiant intensity of 8.4mW/sr with a narrow angle of half intensity of 16°, ensuring focused and efficient infrared emission.
The device features a compact round lens formed from GaAs material, known for stable and efficient light emission. Its through-hole mount type with two pins allows secure and reliable installation on PCBs. The maximum supply voltage is 1.5V, supporting low power consumption in electronic circuits.
This IR LED is packaged in bulk, catering to industrial manufacturing needs and volume production. Made in Japan, the SIR-341ST3F diode ensures consistent performance and durability, suitable for industrial, consumer electronics, and instrumentation applications.
Peak wavelength: 940 nm for precise IR optical signaling. DIP package with through-hole mounting for versatile circuit designs. High radiant intensity of 8.4mW/sr for strong IR output. Compact round lens shape for localized emission angle of 16°.
GaAs material LED provides reliable optical characteristics. Maximum supply voltage rating of 1.5V. Single LED with 2-pin connections for straightforward integration. Bulk packaging suitable for mass production and easy handling.
Manufactured in Japan ensuring stringent quality control.
This product is ideal for diverse applications in industrial optical sensing, electronic signaling, remote controls, and communication systems. Its robust construction and accurate wavelength output support efficient and reliable IR detection and transmission tasks.
Discover more high-quality LEDs and IR emitting Diodes in EnvMart's Electronics Components category to meet all your industrial and commercial electronic design requirements.
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Frequently Asked Questions
The peak wavelength of this IR emitting diode is 940 nm, making it suitable for infrared applications such as remote controls and optical sensors.
The radiant intensity of the SIR-341ST3F is 8.4 mW/sr, ensuring strong infrared emission for effective signaling and detection.
This model features a through-hole mounting type, allowing for secure installation on printed circuit boards (PCBs).
The maximum supply voltage for the SIR-341ST3F is 1.5V, supporting low power operation in electronic circuits.
This IR emitting diode has two pins, facilitating easy integration into various circuit designs.
The angle of half intensity for the SIR-341ST3F is 16°, providing a focused emission pattern for infrared applications.
The LED in the SIR-341ST3F is made from GaAs (Gallium Arsenide), known for its efficient light emission characteristics.
This model is packaged in bulk, which is ideal for industrial manufacturing and volume production needs.
The diode features a compact round lens shape, which aids in localized emission of infrared light.
This IR emitting diode is suitable for a variety of applications, including remote controls, optical sensors, and IR communication devices.
The SIR-341ST3F is manufactured in Japan, ensuring high quality and reliability in its performance.
The SIR-341ST3F includes one LED, making it a simple solution for various electronic applications.
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