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Infineon Gate Driver 2.5 A 16-Pin 10V DSO 2ED2110S06MXUMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | 2ED2110S06MXUMA1 |
| Mount Type | Board |
| Series | 2ED |
| Output Current | 2.5A |
| Maximum Operating Temperature | 125°C |
| Package Type | DSO |
| Minimum Operating Temperature | -40°C |
| Rise Time | 35ns |
| Standards/Approvals | RoHS Compliant |
| Pin Count | 16 |
| Automotive Standard | AEC-Q100 |
| Minimum Supply Voltage | 10V |
| Fall Time | 17ns |
| Driver Type | General Purpose |
Key Features
- Offers an output current of 2.5 A for efficient switching.
- Comes in a 16-pin DSO package ensuring compact design.
- Supports a supply voltage of 10 V with fast rise and fall times of 35 ns and 17 ns respectively.
- Features integrated ultra-fast, low resistance bootstrap diode for improved performance.
- Designed for board mounting with automotive standard AEC-Q100 compliance.
- Operates reliably within a temperature range of -40°C to 125°C.
- Provides excellent ruggedness and noise immunity with no parasitic latch-up.
- Independent under voltage lockout for both high and low side channels.
Product Description
Infineon 2ED2110S06MXUMA1 Gate Driver is a General Purpose Driver designed for high voltage and high speed power MOSFET and IGBT applications. It features independent high and low side referenced output channels and provides an output current of 2.5 A, packaged in a 16-pin DSO configuration operating at a 10 V supply voltage.
This driver IC integrates an ultra-fast, low resistance bootstrap diode and floating channel designed for bootstrap operation, enabling efficient switching performance with rise and fall times of 35 ns and 17 ns respectively. It ensures excellent ruggedness and noise immunity, maintaining operational logic even under negative voltage conditions. The device also prevents parasitic latch-up across all temperature and voltage ranges by eliminating parasitic thyristor structures.
Designed for board mounting, it complies with the automotive standard AEC-Q100, making it suitable for demanding automotive and industrial environments. The operating temperature range spans from -40°C to 125°C, ensuring reliable performance under harsh conditions.
The driver features independent undervoltage lockout for both channels and achieves 50% lower level-shift losses, enhancing overall energy efficiency. Being RoHS compliant, it aligns with environmental standards, supporting sustainable design practices.
Output current: 2.5 A, 16-pin DSO package for compact footprint. Integrated ultra-fast bootstrap diode enabling bootstrap operation. Independent undervoltage lockout for high and low side channels. Automotive grade with AEC-Q100 compliance ensuring reliability.
Wide operating temperature range from -40°C to 125°C for versatile applications. High speed rise and fall times, 35 ns and 17 ns respectively. High noise immunity and no parasitic latch-up risk. Board mount type suitable for PCB integration.
RoHS compliant ensuring hazardous substance regulations adherence.
This Infineon gate driver is well suited for industrial, automotive, power management circuits, and semiconductor control applications requiring rugged and efficient MOSFET/IGBT driving capabilities. Explore more Power Management ICs and Gate Drivers on EnvMart to find components perfect for your electronic system designs.
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Frequently Asked Questions
It provides an output current of 2.5 A, which is suitable for efficient switching applications.
This gate driver comes in a 16-pin DSO package, ensuring a compact design for board mounting.
It operates with a minimum supply voltage of 10 V.
The rise time is 35 ns and the fall time is 17 ns, allowing for high-speed switching performance.
It operates reliably within a temperature range of -40°C to 125°C, making it suitable for harsh environments.
Yes, it features independent undervoltage lockout for both high and low side channels to enhance safety during operation.
It is RoHS compliant and meets the automotive standard AEC-Q100, ensuring reliability in automotive applications.
It is designed for high voltage and high speed power MOSFET and IGBT applications, suitable for industrial and automotive environments.
The integrated ultra-fast, low resistance bootstrap diode enables efficient switching performance, improving overall energy efficiency.
The Infineon Gate Driver is manufactured in India.
It prevents parasitic latch-up by eliminating parasitic thyristor structures across all temperature and voltage ranges.
This model is designed for board mounting, making it suitable for PCB integration.
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