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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 0.55mm |
| Length | 1.7mm |
| Model | ESDA8P80-1U1M |
| Width | 1.1mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | QFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 2 |
| Number of Elements per Chip | 1 |
| Clamping Voltage VC | 13.2V |
| Diode Configuration | Array |
| Direction Type | Uni-Directional |
| Minimum Breakdown Voltage Vbr | 6.9V |
| Maximum Reverse Stand-off Voltage Vwm | 6.3V |
| Peak Pulse Power Dissipation Pppm | 1.1kW |
| Test Current It | 1mA |
| Maximum Peak Pulse Current Ippm | 80A |
| Maximum Reverse Leakage Current | 200nA |
STMicroelectronics ESDA8P80-1U1M is a 1-element uni-directional TVS Diode designed for robust electrostatic discharge (ESD) and electrical overstress (EOS) protection in electronic circuits. With a peak pulse power dissipation of 1.1 kW and a compact 2-pin QFN surface mount package, it offers efficient transient voltage suppression, making it suitable for a variety of industrial, telecommunications, satellite, and power management applications.
The device features a low clamping voltage of 13.2 V and a minimum breakdown voltage of 6.9 V, ensuring sensitive components are protected from voltage spikes. The maximum reverse stand-off voltage is 6.3 V, and it supports surge currents up to 80 A with low leakage current (200 nA), enhancing the reliability and longevity of circuits.
Its small physical dimensions - length 1.7 mm, width 1.1 mm, and height 0.55 mm - allow efficient board space usage. The diode is rated to operate in a wide temperature range from -55°C to 150°C, making it dependable under harsh environmental conditions.
Applications include protection for satellite boxes (LNB), high power DC-DC converters, telecom power rails, Ethernet, and Power over Ethernet (PoE) systems. The ESDA8P80-1U1M is designed to handle high power transient events while saving valuable board space in compact electronic designs.
Uni-directional diode configuration suitable for power line protection. Peak pulse power dissipation of 1.1 kW ensuring high energy absorption. Low clamping voltage of 13.2 V for effective transient suppression. Compact QFN surface mount package with 2 pins for easy PCB integration.
Wide operating temperature range from -55°C to 150°C for industrial use. Low leakage current of 200 nA enhances overall circuit reliability. Minimum breakdown voltage of 6.9 V with maximum reverse stand-off voltage of 6.3 V.
Peak pulse current capacity up to 80 A for transient surge robustness. Small form factor with height 0.55 mm, length 1.7 mm, and width 1.1 mm. Optimized for applications in satellite boxes, DC-DC converters, and telecom power rails.
For industrial and laboratory electronics requiring dependable transient voltage suppression components, the ESDA8P80-1U1M offers an efficient and reliable solution. Discover more protective semiconductor components within our Electronics & Electricals category at EnvMart.
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