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STMicroelectronics 1-Element Uni-Directional TVS Diode 1.1 kW, 2-Pin QFN ESDA8P80-1U1M

Category TVS Diode Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 0.55mm
Length 1.7mm
Model ESDA8P80-1U1M
Width 1.1mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type QFN
Minimum Operating Temperature -55°C
Pin Count 2
Number of Elements per Chip 1
Clamping Voltage VC 13.2V
Diode Configuration Array
Direction Type Uni-Directional
Minimum Breakdown Voltage Vbr 6.9V
Maximum Reverse Stand-off Voltage Vwm 6.3V
Peak Pulse Power Dissipation Pppm 1.1kW
Test Current It 1mA
Maximum Peak Pulse Current Ippm 80A
Maximum Reverse Leakage Current 200nA

Key Features

  • Uni-directional diode configuration suitable for power line protection.
  • Peak pulse power dissipation of 1.1 kW ensuring high energy absorption.
  • Low clamping voltage of 13.2 V for effective transient suppression.
  • Compact QFN surface mount package with 2 pins for easy PCB integration.
  • Wide operating temperature range from -55°C to 150°C for industrial use.
  • Low leakage current of 200 nA enhances overall circuit reliability.
  • Minimum breakdown voltage of 6.9 V with maximum reverse stand-off voltage of 6.3 V.
  • Peak pulse current capacity up to 80 A for transient surge robustness.

Product Description

STMicroelectronics ESDA8P80-1U1M is a 1-element uni-directional TVS Diode designed for robust electrostatic discharge (ESD) and electrical overstress (EOS) protection in electronic circuits. With a peak pulse power dissipation of 1.1 kW and a compact 2-pin QFN surface mount package, it offers efficient transient voltage suppression, making it suitable for a variety of industrial, telecommunications, satellite, and power management applications.

The device features a low clamping voltage of 13.2 V and a minimum breakdown voltage of 6.9 V, ensuring sensitive components are protected from voltage spikes. The maximum reverse stand-off voltage is 6.3 V, and it supports surge currents up to 80 A with low leakage current (200 nA), enhancing the reliability and longevity of circuits.

Its small physical dimensions - length 1.7 mm, width 1.1 mm, and height 0.55 mm - allow efficient board space usage. The diode is rated to operate in a wide temperature range from -55°C to 150°C, making it dependable under harsh environmental conditions.

Applications include protection for satellite boxes (LNB), high power DC-DC converters, telecom power rails, Ethernet, and Power over Ethernet (PoE) systems. The ESDA8P80-1U1M is designed to handle high power transient events while saving valuable board space in compact electronic designs.

Uni-directional diode configuration suitable for power line protection. Peak pulse power dissipation of 1.1 kW ensuring high energy absorption. Low clamping voltage of 13.2 V for effective transient suppression. Compact QFN surface mount package with 2 pins for easy PCB integration.

Wide operating temperature range from -55°C to 150°C for industrial use. Low leakage current of 200 nA enhances overall circuit reliability. Minimum breakdown voltage of 6.9 V with maximum reverse stand-off voltage of 6.3 V.

Peak pulse current capacity up to 80 A for transient surge robustness. Small form factor with height 0.55 mm, length 1.7 mm, and width 1.1 mm. Optimized for applications in satellite boxes, DC-DC converters, and telecom power rails.

For industrial and laboratory electronics requiring dependable transient voltage suppression components, the ESDA8P80-1U1M offers an efficient and reliable solution. Discover more protective semiconductor components within our Electronics & Electricals category at EnvMart.

STMicroelectronics 1-Element Uni-Directional TVS Diode 1.1 kW, 2-Pin QFN ESDA8P80-1U1M
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Frequently Asked Questions

The peak pulse power dissipation of the ESDA8P80-1U1M is 1.1 kW, ensuring high energy absorption during transient events.

The clamping voltage for the ESDA8P80-1U1M is 13.2 V, which helps in effective transient suppression.

The maximum reverse stand-off voltage of the ESDA8P80-1U1M is 6.3 V.

The minimum breakdown voltage for this model is 6.9 V.

The ESDA8P80-1U1M can handle a maximum peak pulse current of 80 A, providing robustness against transient surges.

This model has dimensions of 1.7 mm in length, 1.1 mm in width, and 0.55 mm in height.

The operating temperature range for the ESDA8P80-1U1M is from -55°C to 150°C, making it suitable for industrial applications.

The ESDA8P80-1U1M features a 2-pin configuration, designed for surface mount applications.

This model utilizes a uni-directional diode configuration, which is suitable for power line protection.

The maximum reverse leakage current for the ESDA8P80-1U1M is 200 nA, enhancing circuit reliability.

The ESDA8P80-1U1M comes in a compact QFN package type, facilitating easy PCB integration.

This TVS diode is suitable for applications such as protection for satellite boxes, high power DC-DC converters, and telecom power rails.

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