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ROHM 940 nm Infrared Emitting Diode 5 mm (T-1 3/4) Through Hole Package SIR-563ST3F
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | SIR-563ST3F |
| Packaging | Bulk |
| Mount Type | Through Hole |
| Number Of Leds | 1 |
| Package Type | 5 mm (T-1 3/4) |
| Number of Pins | 2 |
| Lens Shape | Round |
| Maximum Supply Voltage | 1.6V |
| Peak Wavelength | 940nm |
| LED Material | GaAs |
| Angle of half intensity | 15° |
| Radiant Intensity | 21mW/sr |
Key Features
- This diode emits infrared light with a peak wavelength of 940 nm.
- Features a 5 mm round lens with T-1 3/4 package size.
- Has a narrow angle of half intensity at 15 degrees for focused light emission.
- Radiant intensity is 21 mW/sr, providing strong IR output.
- Constructed with gallium arsenide (GaAs) LED material for efficiency.
- Designed for through-hole mounting with two pins for easy PCB assembly.
- Maximum supply voltage is 1.6 V to ensure safe operation.
- Packaged in bulk for volume applications.
Product Description
ROHM SIR-563ST3F is a high-efficiency 940 nm Infrared Emitting Diode designed in a 5 mm (T-1 3/4) through hole package. This infrared LED offers a peak wavelength of 940 nm, making it ideal for various applications including remote controls, sensors, and other electronic components requiring infrared emission.
The device features a round lens shape with a narrow angle of half intensity at 15 degrees, allowing focused infrared light projection. The radiant intensity of 21 mW/sr ensures strong IR output suitable for demanding industrial and commercial uses.
Manufactured with GaAs (gallium arsenide) LED material, this diode exhibits high luminous efficiency. It operates at a maximum supply voltage of 1.6 V and is mounted using a two-pin, through-hole configuration, providing reliable mechanical and electrical connections.
Packaged in bulk, the ROHM SIR-563ST3F infrared diode is tailored for seamless integration into electronic circuits and assemblies. It finds applications in industrial devices, electronic manufacturing, consumer electronics, and optoelectronic systems.
This Diode emits infrared light with a peak wavelength of 940 nm. Features a 5 mm round lens with T-1 3/4 package size. Has a narrow angle of half intensity at 15 degrees for focused light emission. Radiant intensity is 21 mW/sr, providing strong IR output.
Constructed with gallium arsenide (GaAs) LED material for efficiency. Designed for through-hole mounting with two pins for easy PCB assembly. Maximum supply voltage is 1.6 V to ensure safe operation. Packaged in bulk for volume applications.
Suitable for industrial, electronic, and optoelectronic applications requiring IR emission. Explore further electronic components and infrared LEDs at EnvMart for your precise industrial and laboratory needs.
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Frequently Asked Questions
The peak wavelength of this infrared emitting diode is 940 nm, making it suitable for various infrared applications.
The radiant intensity of the ROHM SIR-563ST3F is 21 mW/sr, providing strong infrared output.
The maximum supply voltage for the SIR-563ST3F is 1.6 V, ensuring safe operation.
This model is designed for through-hole mounting with a two-pin configuration for easy PCB assembly.
The angle of half intensity for the SIR-563ST3F is 15 degrees, allowing for focused light emission.
The diode is constructed with gallium arsenide (GaAs) LED material, which contributes to its efficiency.
This infrared emitting diode comes in a 5 mm (T-1 3/4) package type, suitable for various applications.
It is packaged in bulk, making it suitable for volume applications in electronic manufacturing.
This model is suitable for applications in remote controls, sensors, and other electronic components requiring infrared emission.
The lens shape of the SIR-563ST3F is round, which aids in focused light projection.
The ROHM SIR-563ST3F includes one LED per unit, designed for efficient performance.
The country of origin for this infrared emitting diode is India.
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