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Infineon MOSFET Gate Driver 1 A 11-Pin 11V PG-VSON-10 1EDN7136GXTMA1

Category MOSFET Gate Driver Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model 1EDN7136GXTMA1
Output Current 1A
Maximum Operating Temperature 125°C
Package Type PG-VSON-10
Minimum Operating Temperature -40°C
Pin Count 11
Minimum Supply Voltage 11V
Fall Time 5.5ns
Driver Type MOSFET

Key Features

  • Compatible with CoolGaN™ HEMTs and Silicon MOSFETs for versatile applications.
  • Offers a truly differential input to prevent false triggering from ground bounce.
  • Supports high common-mode voltage up to 150 V static and 200 V dynamic.
  • Active Miller clamp with 5 A sink capability prevents induced turn-on.
  • Adjustable charge pump provides negative turn-off supply voltage.
  • Wide operating temperature range from -40°C to 125°C ensures reliability in extreme environments.
  • Optimized for both low-side and high-side switching applications.
  • Compatible with 3.3 V or 5 V logic input levels for flexible integration.

Product Description

Infineon 1EDN7136GXTMA1 MOSFET Gate Driver is a single-channel driver IC designed for highly efficient switching, offering 1 A output current with an 11-pin PG-VSON-10 package and an 11 V supply voltage. It is optimized for compatibility with CoolGaN™ HEMTs, Schottky Gate GaN HEMTs, and Silicon MOSFETs, making it suitable for a variety of power management applications.

The driver utilizes a truly differential input (TDI), enabling the gate driver output to be controlled solely by the voltage difference between input pins. This design eliminates false triggering caused by ground bounce in low-side configurations and supports stable high-side operation with common-mode voltages up to 150 V static and 200 V dynamic.

Key features include an active Miller clamp capable of 5 A sink current to avoid undesired turn-ons induced by switching transients. The device also features an adjustable charge pump that provides a negative turn-off supply voltage, enhancing switching performance and efficiency.

The 1EDN7136GXTMA1 operates reliably over a wide temperature range from -40°C to 125°C, making it suitable for demanding industrial, automotive, and power electronics applications. It is compatible with 3.3 V and 5 V logic input signals, simplifying system integration.

The device is qualified according to JEDEC standards, ensuring robustness and quality for professional electronics manufacturing. Compatible with CoolGaN™ HEMTs and Silicon MOSFETs for versatile applications. Truly differential input reduces risk of false triggering in low-side operations.

High common-mode voltage capability up to 150 V static and 200 V dynamic. Active Miller clamp with 5 A sink capability prevents induced turn-on. Adjustable charge pump for negative turn-off voltage improves switching control.

Operates reliably from -40°C to 125°C. Designed for both low-side and high-side switching applications. Supports 3.3 V or 5 V input logic levels. Qualified to JEDEC standards for industrial use.

This MOSFET Gate Driver is ideal for industrial, automotive, power management, and electronic manufacturing applications requiring precise gate control and reliable operation. Explore more Infineon power management solutions and semiconductors in the EnvMart catalog.

Infineon MOSFET Gate Driver 1 A 11-Pin 11V PG-VSON-10 1EDN7136GXTMA1
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Frequently Asked Questions

The output current of this model is 1 A.

The maximum operating temperature for this gate driver is 125°C.

The minimum supply voltage required for the Infineon MOSFET Gate Driver is 11 V.

This model comes in a PG-VSON-10 package type.

It operates reliably over a temperature range from -40°C to 125°C.

It is compatible with 3.3 V or 5 V logic input levels.

The fall time for this model is 5.5 ns.

It is suitable for industrial, automotive, and power management applications that require precise gate control.

The active Miller clamp provides a 5 A sink capability to prevent undesired turn-on caused by switching transients.

The truly differential input design helps eliminate false triggering caused by ground bounce, enhancing stability in low-side configurations.

Yes, it is qualified according to JEDEC standards, ensuring robustness and quality for professional electronics manufacturing.

It is compatible with CoolGaN™ HEMTs, Schottky Gate GaN HEMTs, and Silicon MOSFETs.

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