Infineon MOSFET Gate Driver 2, 2.5 A 8-Pin 20V DSO 2ED2183S06FXUMA1

Infineon 2ED2183S06FXUMA1 is a high voltage, high speed MOSFET gate driver IC that features two independent output channels capable of delivering a peak output current of 2.5 A. This device is housed in an 8-pin Dual Small Outline (DSO) package, facilitating easy surface mounting on PCB assemblies.

Constructed with SOI technology, it boasts excellent ruggedness and superior noise immunity, enabling stable operation even at negative voltages up to -11 V on the VS pin during transient conditions. The gate driver includes high pulse current buffer stages designed to minimize cross-conduction losses during switching transitions.

Its floating channel design supports bootstrap operation with operating voltages on the VS node reaching up to +650 V and maximum bootstrap voltage up to +675 V. An integrated ultra-fast, low resistance bootstrap diode enhances switching efficiency while enabling rapid recovery.

The device offers swift switching performance with rise times of 15 ns and fall times of 30 ns, making it suitable for high frequency power management circuits. It operates reliably within a wide temperature window from -40°C to 125°C, catering to demanding industrial and power electronics applications.

The compact DSO package measures 4.9 mm in length, 3.9 mm in width, and 1.72 mm in height, enabling design flexibility and space savings. It targets applications such as power MOSFET and IGBT driving for industrial controls, motor drives, HVAC systems, and renewable energy inverters.

Notably, while the product does not bear automotive standard certification, its robust design and specifications make it appropriate for heavy-duty power management and electronic switching solutions in commercial and industrial settings.

High voltage operation with VS node voltage up to 650 V. Integrated ultra-fast low resistance bootstrap diode for efficient operation. Fast switching characteristics with rise time of 15 ns and fall time of 30 ns. Operational temperature range from -40°C to 125°C suitable for industrial environments.

Surface mount device (DSO) package with compact dimensions of 4.9 mm length, 3.9 mm width, and 1.72 mm height. Dual driver configuration with independent high and low side outputs. Robust SOI technology providing ruggedness and excellent noise immunity.

Designed for bootstrap operation with floating channel architecture. Driver type specifically optimized for MOSFET and IGBT power devices. Reliable performance in industrial and automotive applications without automotive standard certification.

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