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Infineon MOSFET Gate Driver Dual Outputs 360 mA 8-Pin Surface Mount 600V 2ED2304S06FXUMA1

Category MOSFET Gate Driver Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.75mm
Length 5mm
Model 2ED2304S06FXUMA1
Width 4mm
Mount Type Surface
Series 2ED2304S06F
Output Current 360mA
Maximum Operating Temperature 125°C
Package Type DSO
Minimum Operating Temperature -40°C
Number of outputs 2
Rise Time 48ns
Standards/Approvals RoHS
Pin Count 8
Maximum Supply Voltage 600V
Minimum Supply Voltage 10V
Number of Drivers 2
Fall Time 40ns
Driver Type MOSFET

Key Features

  • Delivers discrete gate control for two MOSFET transistors with dual outputs.
  • Operates with a minimum supply voltage of 10V and supports up to 600V maximum voltage.
  • Surface mount 8-pin DSO package with compact size of 4mm by 5mm footprint.
  • Fast switching performance with 48ns rise time and 40ns fall time.
  • Operates reliably in temperature range from -40°C to 125°C.
  • Meets RoHS compliance for environmental safety.
  • Designed for half-bridge and push-pull inverter stages and industrial motor drive systems.

Product Description

The Infineon 2ED2304S06FXUMA1 is a high-performance MOSFET gate driver designed for controlling MOSFET gates in high-voltage power circuits. It provides dual outputs with a drive current of 360 mA, enabling robust charging and discharging of MOSFET gates. The driver operates over a wide supply voltage range from 10V minimum to 600V maximum, suitable for various power electronics applications.

This device is supplied in an 8-pin DSO surface-mount package, measuring 5mm in length and 4mm in width, making it ideal for compact circuit board layouts where space is at a premium. The fast switching characteristics with a rise time of 48 ns and a fall time of 40 ns support improved turn-on speed and reduced switching losses.

Its operational temperature range from -40°C to 125°C makes it reliable for industrial applications involving harsh temperature environments. The product complies with RoHS standards, ensuring environmentally friendly materials.

The 2ED2304S06FXUMA1 gate driver is well-suited for half-bridge and push-pull inverter stages, high-voltage switch networks in power converters, isolated gate-driver front-ends with transformers, and compact power modules. It is particularly useful in industrial motor drive systems and other demanding power management tasks.

Dual driver channels providing independent gate outputs. Robust gate drive current of 360 mA. Wide supply voltage range from 10V to 600V. Small 8-pin DSO surface mount package suitable for compact designs. Fast rise time and fall time for efficient switching.

RoHS compliant and environmentally safe materials. Reliable operation over -40°C to 125°C temperature range.

This Infineon MOSFET Gate Driver is an essential component for power converter designs, industrial motor drives, and high-voltage power switching applications. Explore EnvMart's broad catalog for additional power management integrated circuits and semiconductor solutions.

Infineon MOSFET Gate Driver Dual Outputs 360 mA 8-Pin Surface Mount 600V 2ED2304S06FXUMA1
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Frequently Asked Questions

The maximum supply voltage for this model is 600V.

It provides a robust output current of 360 mA for driving MOSFET gates.

This model has a length of 5mm, a width of 4mm, and a height of 1.75mm.

It operates reliably within a temperature range from -40°C to 125°C.

The rise time is 48 ns and the fall time is 40 ns, supporting efficient switching performance.

It is supplied in an 8-pin DSO surface-mount package.

Yes, this model meets RoHS compliance for environmental safety.

This MOSFET gate driver features dual outputs, allowing for independent gate control.

It is designed for half-bridge and push-pull inverter stages, as well as industrial motor drive systems.

The minimum supply voltage required is 10V.

This model is classified as a MOSFET driver, specifically designed for driving MOSFET gates.

The fast switching performance, with a rise time of 48 ns and fall time of 40 ns, helps reduce switching losses and improve turn-on speed.

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