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ROHM Power Bipolar Transistor 1.5 A NPN 80 V Surface Mount 3-Pin SOT-89 Package 2SCR554PHZGT100

Category Bipolar Transistors Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Height 1.6mm
Length 4.7mm
Model 2SCR554PHZGT100
Width 2.7mm
Mount Type Surface
Series 2SCR554PHZG
Maximum Operating Temperature 150°C
Package Type SOT-89
Pin Count 3
Maximum Collector Emitter Voltage Vceo 80V
Minimum DC Current Gain hFE 120
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 80V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 500mW
Maximum DC Collector Current Idc 1.5A
Transistor Configuration Single
Maximum Transition Frequency ft 320MHz
Nexperia BSR41 Transistor, 1 A NPN, 60 V, 3-Pin SOT-89Brand Nexperia

Key Features

  • Features a compact surface mount SOT-89 package with 3 pins.
  • Maximum power dissipation of 500 mW suitable for low power applications.
  • Designed for high speed switching with a transition frequency of 320 MHz.
  • Offers a low saturation voltage of 300 mV at IC/IB = 500mA/25mA.
  • Built to withstand maximum operating temperature of 150°C for reliable performance.
  • Meets AEC-Q101 automotive standard ensuring quality for automotive electronic systems.
  • Has a minimum DC current gain (hFE) of 120 for effective amplification.

Product Description

ROHM 2SCR554PHZGT100 is a power bipolar NPN transistor designed for use in electronic and electrical semiconductor applications requiring efficient switching and amplification. It supports a maximum DC collector current of 1.5 A and can handle collector emitter voltages up to 80 V. The transistor is housed in a compact SOT-89 surface mount package with 3 pins, making it suitable for space-limited circuit board designs.

Boasting a low saturation voltage VCE(sat) max of 300 mV measured at collector current 500 mA and base current 25 mA, this transistor performs efficiently in low frequency amplifier and switching roles. It offers a maximum power dissipation of 500 mW and is rated to operate safely at temperatures up to 150°C.

The device delivers a minimum DC current gain (hFE) of 120 and supports high-frequency operation with a transition frequency (ft) of 320 MHz. The transistor meets the stringent AEC-Q101 automotive qualification, confirming its reliability for automotive electronics and industrial use cases including manufacturing and power supply systems.

The physical dimensions of the transistor are compact, measuring 4.7 mm in length, 2.7 mm in width, and 1.6 mm in height, optimized for surface mounting. It has a transistor configuration of single type with NPN polarity and a standard 3-pin layout.

Compact SOT-89 surface mount package facilitates easy PCB integration. High speed switching capability supports efficient electronic designs. Robust construction rated for industrial and automotive environments. Low saturation voltage minimizes energy losses in switching applications.

Meets industrial standards with AEC-Q101 automotive qualification. Ideal for low frequency amplifiers, power regulators, and switching circuits. Supports continuous operation up to 150°C operating temperature.

This ROHM 2SCR554PHZGT100 transistor is a reliable component choice for designers requiring robust power transistor solutions in industries such as automotive, electronics manufacturing, HVAC systems, and power supply design. Explore EnvMart’s selection for compatible components and accessories to optimize your application.

Explore more products in our Bipolar Transistors category.

ROHM Power Bipolar Transistor 1.5 A NPN 80 V Surface Mount 3-Pin SOT-89 Package 2SCR554PHZGT100
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Frequently Asked Questions

The maximum DC collector current for this model is 1.5 A.

It has a transition frequency of 320 MHz, suitable for high-speed switching applications.

The dimensions of this transistor are 4.7 mm in length, 2.7 mm in width, and 1.6 mm in height.

This transistor can operate safely at a maximum temperature of 150°C.

It is housed in a compact SOT-89 surface mount package with 3 pins.

The minimum DC current gain (hFE) is 120, which is effective for amplification.

The maximum power dissipation for this model is 500 mW.

It meets the AEC-Q101 automotive standard, ensuring quality for automotive electronic systems.

This model has a single transistor configuration with NPN polarity.

The maximum collector-emitter voltage (Vceo) is rated at 80 V.

It is suitable for low frequency amplifiers, power regulators, and switching circuits.

The maximum emitter-base voltage (VEBO) is 6 V.

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