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ROHM Digital Transistor Dual NPN + NPN 100 mA 50 V SOT-563 6-Pin EMH52T2R

Category Digital Transistor Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Height 0.55mm
Length 1.7mm
Model EMH52T2R
Width 1.7mm
Mount Type Surface
Series EMH52
Maximum Operating Temperature 150°C
Package Type SOT-563
Pin Count 6
Maximum Continuous Collector Current Ic 100mA
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 80
Transistor Polarity NPN + NPN
Maximum Collector Base Voltage VCBO 50V
Maximum Power Dissipation Pd 150mW
Transistor Configuration Dual

Key Features

  • Packaged in compact SOT-563 surface mount 6-pin package.
  • Maximum power dissipation is 150 mW for efficient operation.
  • Minimum DC current gain (hFE) of 80 ensures reliable amplification.
  • Transistor elements are independent, reducing interface and mounting costs.
  • Operating temperature range up to 150°C for high durability.
  • Suitable for industrial and electronic component applications.
  • Ideal for compact circuit designs requiring dual digital transistors.

Product Description

ROHM EMH52T2R is a dual digital transistor featuring two NPN transistors integrated into a compact SOT-563 surface mount 6-pin package. It supports a maximum collector emitter voltage of 50 V and a maximum continuous collector current of 100 mA. With a power dissipation capacity of 150 mW and a minimum DC current gain of 80, this transistor delivers efficient performance in demanding electronic circuits.

This dual digital transistor provides independent transistor elements which eliminate interface issues and reduce mounting cost and PCB area usage effectively. It is designed for excellent durability, operating reliably up to a maximum temperature of 150°C, thus suitable for industrial automation, consumer electronics, and other semiconductor applications.

The physical dimensions of the package are compact and precise at 1.7 mm length by 1.7 mm width and 0.55 mm height, making it suitable for high-density circuit board designs requiring space optimization.

Compact SOT-563 6-pin surface mount package ensures easy PCB integration. Dual NPN transistor configuration enhances functional versatility in circuit design. Maximum collector emitter voltage of 50 V provides robustness for diverse applications.

100 mA collector current allows operation in sensitive electronic devices. 150 mW power dissipation supports stable electrical performance. Minimum DC current gain (hFE) of 80 ensures reliable amplification characteristics.

Operating temperature range up to 150°C for high reliability in harsh environments.

This ROHM EMH52T2R Digital Transistor series is widely applied in industrial electronics, signal switching, amplification, and other electronic component assemblies requiring dual transistor functionality in a minimal footprint. The product supports enhanced production efficiency by fitting compactly on printed circuit boards and providing consistent electrical characteristics essential for modern semiconductor devices.

Explore the Electronics & Electricals category for more semiconductor and transistor products designed for industrial and laboratory applications.

ROHM Digital Transistor Dual NPN + NPN 100 mA 50 V SOT-563 6-Pin EMH52T2R
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Frequently Asked Questions

The maximum collector emitter voltage for the ROHM EMH52T2R is 50 V.

This dual NPN transistor can handle a maximum continuous collector current of 100 mA.

The maximum power dissipation capacity is 150 mW for efficient operation.

The minimum DC current gain (hFE) of this model is 80, ensuring reliable amplification.

The dimensions of the SOT-563 package are 1.7 mm in length, 1.7 mm in width, and 0.55 mm in height.

This model operates reliably in an environment with temperatures up to 150°C.

The EMH52T2R features a 6-pin configuration.

It is designed for surface mounting, suitable for compact circuit designs.

This dual digital transistor is suitable for industrial automation, consumer electronics, and other semiconductor applications requiring dual transistor functionality.

The EMH52T2R features a dual NPN transistor configuration, enhancing its versatility in circuit design.

The independent transistor elements reduce interface issues and mounting costs, leading to more efficient PCB area usage.

The country of origin for this model is India.

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