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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 750μm |
| Length | 4.5mm |
| Model | FM25CL64B-DG |
| Width | 4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 85°C |
| Package Type | DFN |
| Minimum Operating Temperature | -40°C |
| Memory size | 64kB |
| Interface Type | SPI |
| Pin Count | 8 |
| Maximum Supply Voltage | 3.65V |
| Minimum Supply Voltage | 2.7V |
| Maximum Clock Frequency | 20MHz |
| Organisation | 8K x 8 bit |
| Number of Bits per Word | 8 |
| Maximum Random Access Time | 20ns |
| Number of Words | 8K |
| Infineon 64kbit SPI FRAM Memory 8-Pin TDFN, FM25CL64B-DGBrand | Cypress Semiconductor |
Infineon FM25CL64B-DG is a 64 kB ferroelectric random access memory (FRAM) module designed for high-performance, energy-efficient non-volatile storage. This surface-mount device comes in a compact 8-pin DFN package measuring 4.5 mm in length, 4 mm in width, and 750 µm in height, supporting efficient PCB layouts.
The memory features an 8K x 8-bit organization with an SPI interface operating at a maximum clock frequency of 20 MHz, coupled with a maximum random access time of just 20 nanoseconds.
Operating voltage ranges from 2.7 V minimum to 3.65 V maximum, allowing reliable performance in various power supply environments. The device supports a wide operating temperature range from -40°C to +85°C, making it suitable for industrial, communication, automotive, and embedded system applications.
FRAM technology offers advantages such as low power consumption, fast write speed, high endurance, and superior tamper resistance compared to traditional RAM and ROM devices. This memory solution is optimal for applications requiring frequent data writes and high data integrity like smart cards, cellular phones, and security devices.
64 kiloBytes memory size organized as 8K x 8 bits. SPI interface supporting 8-bit data bus width. Maximum clock frequency of 20 MHz ensures fast data transfer. Compact 8-pin DFN surface-mount package enhances PCB density.
Operating voltage from 2.7 V to 3.65 V for versatile power options. Wide temperature range (-40°C to 85°C) suitable for harsh environments. High endurance with fast write capabilities for reliable performance. Non-volatile ferroelectric memory technology ensures low power and tamper resistance.
Applicable in smart cards, cellular phones, and embedded secure devices. Automotive AEC-Q100 qualified variants available with suffix A. Explore a range of reliable memory solutions for your industrial and electronic projects on EnvMart.
Explore more products in our Memory Chips category.
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