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WeEn Semiconductors Co., Ltd Thyristor SCR 600 V 0.6 A Surface Mount SC-73 Package BT148W-600R,115

Category Thyristor Brand WeEn Semiconductors Co., Ltd Condition New

Specifications

Country of Origin India
Brand WeEn Semiconductors Co., Ltd
Model BT148W-600R,115
Mount Type Surface
Maximum Operating Temperature 125°C
Package Type SC-73
Minimum Operating Temperature -40°C
Pin Count 4
Rated Average On-State Current Irms 0.6A
Thyristor Type SCR
Repetitive Peak Reverse Voltage VDRM 600V
Surge Current Rating 11A
Maximum Gate Trigger Current Igt 0.2mA
Maximum Holding Current Ih 6mA
Maximum Gate Trigger Voltage Vgt 1.5V
Peak On-State Voltage 1.5V
Repetitive Peak Off-State Current 0.5mA

Key Features

  • High bidirectional blocking voltage capability of 600 V.
  • Rated average on-state current of 0.6 A for reliable performance.
  • Surface mount SC-73 package with 4 pins convenient for PCB assembly.
  • High surge current rating of 11 A for transient conditions.
  • Maximum gate trigger current of 0.2 mA and holding current of 6 mA.
  • Operating temperature range from -40°C to 125°C for industrial applications.
  • Maximum gate trigger voltage of 1.5 V and peak on-state voltage of 1.5 V.
  • Planar passivated silicon controlled rectifier (SCR) technology for durability.

Product Description

WeEn Semiconductors Co., Ltd model BT148W-600R,115 is a Thyristor SCR with a repetitive peak reverse voltage of 600 V and average on-state current rating of 0.6 A. It is provided in a SC-73 surface mount package with 4 pins, designed for compact and efficient electronic circuits requiring reliable switching and phase control.

This component features high surge current capability rated at 11 A and excellent thermal cycling performance, making it suitable for demanding industrial and commercial electronics environments. Its wide operating temperature range from -40°C to 125°C ensures stable operation under varying ambient conditions.

The device has a low maximum gate trigger current of 0.2 mA and a holding current of 6 mA, contributing to efficient triggering performance with minimal power consumption. The gate trigger voltage and peak on-state voltage are both rated at 1.5 V, supporting consistent switching characteristics.

Constructed using planar passivated silicon controlled rectifier (SCR) technology, this thyristor offers durable and reliable performance for power control applications such as motor control, lighting regulation, and industrial automation.

High bidirectional blocking voltage capability of 600 V. Rated average on-state current of 0.6 A. Surge current rating of 11 A ensures transient tolerance. 4-pin SC-73 surface mount package designed for compact circuits.

Wide operating temperature range from -40°C to 125°C. Low gate trigger current of 0.2 mA for efficient triggering. Holding current rated at 6 mA supports stable conduction. Planar passivated SCR design enhances durability.

This Thyristor is ideal for use in power semiconductor circuits within industrial, manufacturing, and electronic device applications. Its characteristics support phase control and switching tasks with high reliability and thermal endurance. Browse the Electronics & Electricals Semiconductor category at EnvMart for more components like this.

WeEn Semiconductors Co., Ltd Thyristor SCR 600 V 0.6 A Surface Mount SC-73 Package BT148W-600R,115
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Frequently Asked Questions

The maximum operating temperature for the BT148W-600R,115 thyristor is 125°C.

This model has a rated average on-state current of 0.6 A.

The surge current rating of this thyristor is 11 A, allowing it to handle transient conditions effectively.

It is provided in a SC-73 surface mount package with 4 pins, suitable for compact electronic circuits.

The operating temperature range for the BT148W-600R,115 is from -40°C to 125°C.

The maximum gate trigger current is 0.2 mA, which contributes to efficient triggering performance.

The holding current is rated at 6 mA, supporting stable conduction during operation.

The maximum gate trigger voltage is 1.5 V.

The repetitive peak reverse voltage (VDRM) is 600 V, providing high bidirectional blocking capability.

This model is classified as a silicon controlled rectifier (SCR).

The peak on-state voltage is rated at 1.5 V.

The country of origin for this thyristor is India.

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