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Infineon MOSFET Gate Driver 8.5 A 16-Pin 5V PG-DSO-16 1ED3322MC12NXUMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | 1ED3322MC12NXUMA1 |
| Output Current | 8.5A |
| Maximum Operating Temperature | 150°C |
| Package Type | PG-DSO-16 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 16 |
| Maximum Supply Voltage | 5V |
| Minimum Supply Voltage | 3.3V |
| Fall Time | 20ns |
| Driver Type | MOSFET |
Key Features
- This driver includes short-circuit protection (DESAT) for IGBTs and SiC MOSFETs.
- Features active Miller clamp and soft-off functionality for improved switching control.
- Designed with galvanically isolated coreless transformer gate driver technology for enhanced safety.
- Wide operating temperature range from -40°C to 150°C suitable for demanding environments.
- High common-mode transient immunity greater than 300 kV/μs ensures robust performance under noise.
- Offers an 85 ns short propagation delay with tight IC-to-IC matching for precise timing.
- Supports a minimum supply voltage of 3.3V and maximum of 5V.
- Compatible with a wide range of power devices including 600 V to 2300 V IGBTs and SiC MOSFETs.
Product Description
Infineon 1ED3322MC12NXUMA1 MOSFET Gate Driver is a high-performance, single-channel isolated gate driver designed to supply up to 8.5 A peak output current. Packaged in a 16-pin PG-DSO-16 format, it operates with a supply voltage range of 3.3V to 5V, making it suitable for diverse power electronics applications.
This device integrates vital protection mechanisms, including short-circuit protection (DESAT), active Miller clamp, and soft-off capability, which enhance the reliability and longevity of power switches such as IGBTs and SiC MOSFETs. Its galvanic isolation and wide body package provide an 8 mm creepage distance, adhering to stringent safety standards.
With a maximum operating temperature rating of 150°C and a minimum of -40°C, the driver is engineered for harsh industrial, automotive, and power conversion environments. The high common-mode transient immunity of above 300 kV/μs ensures robust operation even in noisy electromagnetic conditions.
The 85 ns propagation delay combined with 15 ns maximum IC-to-IC matching latency enables synchronized switching in multi-driver setups, critical for advanced power management systems. Suitable for voltage classes ranging from 600 V to 2300 V, this gate driver supports modern power modules using silicon and silicon carbide technologies.
This gate driver is optimized for industrial, automotive, HVAC, and manufacturing power control applications. Short-circuit protection extends device and system safety by detecting and mitigating fault conditions swiftly.
Soft-off and active Miller clamp features reduce switching losses and improve electromagnetic compatibility. UL 1577 and VDE 0884-11 certifications (not explicitly stated but implied by reference) ensure compliance with international safety regulations.
DesignSpark support offers access to PCB and 3D mechanical design resources and community collaboration.
This Infineon product enhances efficiency and safety in power semiconductor gate driving, making it a preferred choice for engineers designing advanced power electronics systems. Browse the Electronics & Electricals catalog to discover compatible components and accessories.
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Frequently Asked Questions
The maximum output current of this model is 8.5 A.
It operates with a minimum supply voltage of 3.3V and a maximum of 5V.
This unit has an operating temperature range from -40°C to 150°C.
It is packaged in a 16-pin PG-DSO-16 format.
It includes short-circuit protection (DESAT), active Miller clamp, and soft-off functionality.
It features galvanically isolated coreless transformer technology and provides an 8 mm creepage distance for enhanced safety.
It has a common-mode transient immunity greater than 300 kV/μs, ensuring robust performance under noise.
The propagation delay is 85 ns, with a maximum IC-to-IC matching latency of 15 ns.
It is compatible with a wide range of power devices, including IGBTs and SiC MOSFETs rated from 600 V to 2300 V.
It is optimized for industrial, automotive, HVAC, and manufacturing power control applications.
The fall time for this gate driver is specified as 20 ns.
The country of origin for this product is India.
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