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Infineon High Speed Power MOSFET & IGBT Driver 2 Outputs 290 mA 8-Pin 25V DSO 2ED2109S06FXUMA1

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Infineon High Speed Power MOSFET & IGBT Driver 2 Outputs 290 mA 8-Pin 25V DSO 2ED2109S06FXUMA1

Name: Infineon High Speed Power MOSFET & IGBT Driver 2 Outputs 290 mA 8-Pin 25V DSO 2ED2109S06FXUMA1
Brand: Infineon
SKU: 172022
Price: 0.99 USD
Availability: InStock

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Category MOSFET Gate Driver Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	1.72mm
Length	4.9mm
Model	2ED2109S06FXUMA1
Width	3.9mm
Mount Type	Surface
Series	2ED2109 (4) S06F (J)
Output Current	290mA
Maximum Operating Temperature	125°C
Package Type	DSO
Minimum Operating Temperature	-40°C
Number of outputs	2
Rise Time	150ns
Standards/Approvals	JEDEC47/20/22
Pin Count	8
Maximum Supply Voltage	25V
Minimum Supply Voltage	20V
Number of Drivers	2
Fall Time	80ns
Driver Type	MOSFET

Key Features

Provides high speed switching for power MOSFETs and IGBTs.
Supports a maximum supply voltage of 25 V and minimum of 20 V.
Includes integrated ultra-fast low resistance bootstrap diode.
Offers excellent ruggedness and noise immunity using SOI technology.
Designed for surface mounting, measuring 4.9mm length and 3.9mm width.
Operates reliably across temperature range from -40°C to 125°C.
Has fall time of 80 ns and rise time of 150 ns for fast switching.
Complies with JEDEC47/20/22 standards for quality and reliability.

Product Description

Infineon 2ED2109S06FXUMA1 is a high-speed power MOSFET and IGBT driver designed to provide efficient, high current switching control with 2 output channels capable of handling 290 mA each. Housed in an 8-pin DSO package, this driver operates within a supply voltage range of 20 V to 25 V and ensures fast switching with fall and rise times of 80 ns and 150 ns respectively.

Built on SOI technology, the device offers exceptional ruggedness and high noise immunity, maintaining operational logic even when subjected to negative voltage transients up to -11 V on the VS pin. Its floating channel supports bootstrap operation with a maximum bootstrap voltage of +675 V aided by an integrated ultra-fast, low resistance bootstrap diode.

This driver is surface mounted and compact with dimensions of 4.9mm length, 3.9mm width, and 1.72mm height, suitable for high density PCB designs. It operates effectively over a wide temperature range from -40°C to 125°C making it suitable for demanding automotive and industrial environments.

Applications include power management ICs, motor drivers, and other semiconductor switching circuits requiring precise and fast gate drive signals. It meets JEDEC47/20/22 quality and reliability standards ensuring consistent performance.

Provides high speed switching for power MOSFETs and IGBTs. Supports a maximum supply voltage of 25 V and minimum of 20 V. Includes integrated ultra-fast low resistance bootstrap diode. Offers excellent ruggedness and noise immunity using SOI technology.

Designed for surface mounting, measuring 4.9mm length and 3.9mm width. Operates reliably across temperature range from -40°C to 125°C. Has fall time of 80 ns and rise time of 150 ns for fast switching. Complies with JEDEC47/20/22 standards for quality and reliability.

Ideal for automotive and industrial power management applications. Browse the Electronics & Electricals category at EnvMart for advanced semiconductor solutions and power management ICs from leading brands like Infineon.

Explore more products in our MOSFET Gate Driver category.