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Wolfspeed N-Channel Enhancement Mode MOSFET, 30 A, 1200 V, 3-Pin TO-247 C3M0075120D

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Wolfspeed N-Channel Enhancement Mode MOSFET, 30 A, 1200 V, 3-Pin TO-247 C3M0075120D

Name: Wolfspeed N-Channel Enhancement Mode MOSFET, 30 A, 1200 V, 3-Pin TO-247 C3M0075120D
Brand: Wolfspeed
SKU: 159981
Price: 19.24 USD
Availability: InStock

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Category Power Semiconductor Brand Wolfspeed Condition New

Specifications

Country of Origin	China
Brand	Wolfspeed
Height	21.1mm
Length	16.13mm
Model	C3M0075120D
Width	5.21mm
Mount Type	Through Hole
Series	C3M
Maximum Operating Temperature	150°C
Package Type	TO-247
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	30A
Maximum Drain Source Voltage Vds	1.2kV
Maximum Drain Source Resistance Rds	75mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	113.6W
Typical Gate Charge Qg @ Vgs	54nC
Maximum Gate Source Voltage Vgs	-8, 19V
Forward Voltage Vf	4.5V

Key Features

Supports a maximum continuous drain current of 30 A.
Maximum drain source voltage rating of 1.2 kV for high voltage applications.
TO-247 package with 3 pins suitable for through-hole mounting.
Low on-resistance of 75 milliohms enhances efficiency and reduces power loss.
Operating temperature range from -55°C to 150°C for reliability in harsh environments.
Maximum power dissipation of 113.6 W ensuring robust thermal handling.
Typical gate charge of 54 nC allowing fast switching speeds.
Forward voltage drop of 4.5 V and maximum gate source voltage ranging from -8 to 19 V.

Product Description

Wolfspeed C3M0075120D is an advanced N-Channel Enhancement Mode MOSFET designed for high voltage and current power semiconductor applications. Featuring a maximum continuous drain current of 30 A and a drain source voltage rating of 1200 V, this device is ideal for demanding industrial, automotive, and power management uses.

The MOSFET utilizes the TO-247 package with 3 pins suitable for through-hole mounting, facilitating easy integration into power converters, inverters, and bridgeless power factor correction (PFC) topologies. With a low on-resistance of 75 milliohms combined with a typical gate charge of 54 nC, the device provides efficient switching performance and helps reduce power losses and heat generation.

Operating over a wide temperature range from -55°C to 150°C, this MOSFET ensures reliable performance under extreme environmental conditions. It has a maximum power dissipation of 113.6 watts and compact physical dimensions for space-efficient PCB layouts.

The device’s fast intrinsic body diode with low reverse recovery charge improves performance in inverter and charger applications. It is easy to parallel and features simple gate drive requirements, enabling flexible usage in various power management and industrial electronics circuits.

Wolfspeed’s silicon carbide technology extends device lifetime and offers superior efficiency compared to traditional silicon MOSFETs. This component is suitable for high voltage DC-DC converters, motor drives, power supplies, and other industrial and commercial power electronics systems.

Supports up to 30 A continuous current. High voltage rating of 1200 V. Efficient low on-resistance operation. Wide operating temperature range from -55°C to 150°C. Compact TO-247 package for through-hole mounting. Fast switching speeds enabled by low gate charge.

Robust power dissipation capability of 113.6 W. Manufactured in China, product condition new.

Discover reliable performance and energy efficiency with the Wolfspeed C3M0075120D N-Channel MOSFET. Explore more Power Semiconductors at EnvMart for your industrial and electronic component needs.