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Infineon N-Channel Power Semiconductor 30 A 1200 V 3-Pin TO-247 Through Hole IGW15T120FKSA1

Category Power Semiconductor Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IGW15T120FKSA1
Mount Type Through Hole
Series TrenchStop
Energy Rating 4.1mJ
Maximum Operating Temperature 150°C
Package Type TO-247
Minimum Operating Temperature -40°C
Standards/Approvals JEDEC1, Pb-free lead plating, RoHS
Pin Count 3
Maximum Continuous Collector Current Ic 30A
Maximum Collector Emitter Voltage Vceo 1200V
Maximum Collector Emitter Saturation Voltage VceSAT 2.2V
Channel Type N
Maximum Power Dissipation Pd 110W
Maximum Gate Emitter Voltage VGEO ±20 V

Key Features

  • Maximum continuous collector current of 30 amperes.
  • Collector-emitter voltage rated up to 1200 volts.
  • Power dissipation capability of 110 watts.
  • Through Hole TO-247 3-pin package for reliable mounting.
  • N channel type suitable for high efficiency power switching.
  • Maximum gate-emitter voltage of ±20 volts.
  • Low collector-emitter saturation voltage of 2.2 volts.
  • Operating temperature range from -40°C to 150°C.

Product Description

Infineon IGW15T120FKSA1 is a high-performance N-Channel Power Semiconductor designed for industrial and electronic power applications requiring efficient switching and high current capacity. This device comes in a robust 3-Pin TO-247 Through Hole package that supports reliable mounting and thermal dissipation.

The transistor supports a maximum continuous collector current of 30A and withstands collector-emitter voltages up to 1200V, making it suitable for medium to high-voltage power electronics environments. Its power dissipation rating of 110W ensures it operates safely under substantial load conditions.

With a maximum gate-emitter voltage of ±20V and a low collector-emitter saturation voltage of 2.2V, this semiconductor provides efficient switching with minimal power loss. The operating temperature range from -40°C to 150°C allows for use in harsh industrial environments.

This part utilizes Infineon's advanced TrenchStop technology, enhancing switching performance with low turn-off losses and short tail current, contributing to reduced electromagnetic interference. The component meets JEDEC1 standards, features Pb-free lead plating, and complies with RoHS directives for environmental safety.

Maximum continuous collector current of 30 A allows high current flow. Collector-emitter voltage rating of 1200 V ensures high voltage operation. 110 W power dissipation rating supports heavy-duty workloads. TO-247 Through Hole package design aids efficient heat management.

N channel type suitable for power switching applications. ±20 V maximum gate-emitter voltage for reliable control gate driving. 2.2 V saturation voltage minimizes conduction losses. Wide operating temperature range from -40°C to 150°C for rugged environments.

Meets JEDEC1, Pb-free lead plating, RoHS standards ensuring quality and compliance.

The IGW15T120FKSA1 transistor is widely used in industrial controls, power inverters, motor drives, and renewable energy systems. It is ideal for engineers seeking reliable and efficient power switching components in their electronic designs.

Explore more Power Semiconductor parts and related components to enhance your project and production efficiency at EnvMart.

Infineon N-Channel Power Semiconductor 30 A 1200 V 3-Pin TO-247 Through Hole IGW15T120FKSA1
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Frequently Asked Questions

The maximum continuous collector current for this model is 30 amperes.

This power semiconductor has a collector-emitter voltage rating of up to 1200 volts.

It has a power dissipation capability of 110 watts, allowing it to operate safely under substantial load conditions.

This model comes in a 3-Pin TO-247 Through Hole package, which supports reliable mounting and thermal dissipation.

The maximum gate-emitter voltage for this unit is ±20 volts.

The collector-emitter saturation voltage is 2.2 volts, which helps minimize conduction losses.

The operating temperature range for this device is from -40°C to 150°C, suitable for harsh industrial environments.

This semiconductor meets JEDEC1 standards and features Pb-free lead plating, complying with RoHS directives for environmental safety.

It is widely used in industrial controls, power inverters, motor drives, and renewable energy systems.

This part utilizes Infineon's advanced TrenchStop technology, enhancing switching performance with low turn-off losses.

The energy rating for this model is 4.1 mJ.

The TO-247 package of this semiconductor has 3 pins.

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