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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IGW15T120FKSA1 |
| Mount Type | Through Hole |
| Series | TrenchStop |
| Energy Rating | 4.1mJ |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | JEDEC1, Pb-free lead plating, RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 30A |
| Maximum Collector Emitter Voltage Vceo | 1200V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.2V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 110W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
Infineon IGW15T120FKSA1 is a high-performance N-Channel Power Semiconductor designed for industrial and electronic power applications requiring efficient switching and high current capacity. This device comes in a robust 3-Pin TO-247 Through Hole package that supports reliable mounting and thermal dissipation.
The transistor supports a maximum continuous collector current of 30A and withstands collector-emitter voltages up to 1200V, making it suitable for medium to high-voltage power electronics environments. Its power dissipation rating of 110W ensures it operates safely under substantial load conditions.
With a maximum gate-emitter voltage of ±20V and a low collector-emitter saturation voltage of 2.2V, this semiconductor provides efficient switching with minimal power loss. The operating temperature range from -40°C to 150°C allows for use in harsh industrial environments.
This part utilizes Infineon's advanced TrenchStop technology, enhancing switching performance with low turn-off losses and short tail current, contributing to reduced electromagnetic interference. The component meets JEDEC1 standards, features Pb-free lead plating, and complies with RoHS directives for environmental safety.
Maximum continuous collector current of 30 A allows high current flow. Collector-emitter voltage rating of 1200 V ensures high voltage operation. 110 W power dissipation rating supports heavy-duty workloads. TO-247 Through Hole package design aids efficient heat management.
N channel type suitable for power switching applications. ±20 V maximum gate-emitter voltage for reliable control gate driving. 2.2 V saturation voltage minimizes conduction losses. Wide operating temperature range from -40°C to 150°C for rugged environments.
Meets JEDEC1, Pb-free lead plating, RoHS standards ensuring quality and compliance.
The IGW15T120FKSA1 transistor is widely used in industrial controls, power inverters, motor drives, and renewable energy systems. It is ideal for engineers seeking reliable and efficient power switching components in their electronic designs.
Explore more Power Semiconductor parts and related components to enhance your project and production efficiency at EnvMart.
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