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onsemi Transistor NPN Darlington Bipolar 8 A 60 V DC 3-Pin TO-220 2N6043G

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onsemi Transistor NPN Darlington Bipolar 8 A 60 V DC 3-Pin TO-220 2N6043G

Name: onsemi Transistor NPN Darlington Bipolar 8 A 60 V DC 3-Pin TO-220 2N6043G
Brand: onsemi
SKU: 156546
Price: 0.7 USD
Availability: InStock

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Category Discrete Semiconductors Brand onsemi Condition New

Specifications

Country of Origin	China
Brand	onsemi
Height	30.02mm
Length	10.53mm
Model	2N6043G
Width	4.83mm
Mount Type	Through Hole
Series	2N6043
Maximum Operating Temperature	150°C
Package Type	TO-220
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	60V dc
Minimum DC Current Gain hFE	1000
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	5V dc
Maximum Collector Base Voltage VCBO	60V dc
Maximum Power Dissipation Pd	75W
Maximum DC Collector Current Idc	8A
Transistor Configuration	Single
Maximum Transition Frequency ft	1MHz

Key Features

This transistor supports a maximum DC collector current of 8 amperes.
The maximum collector-emitter voltage rating is 60 volts DC for reliable operation.
It features low collector-emitter saturation voltage of 2.0 Vdc at 4.0 Adc.
The transistor configuration is single with NPN polarity for versatile use.
Designed for through-hole mounting with a durable TO-220 package style.
Offers a high minimum DC current gain (hFE) of 1000 for efficient amplification.
Supports operation between temperatures of -65°C to 150°C for industrial robustness.
Features built-in base-emitter shunt resistors and monolithic construction for performance stability.

Product Description

onsemi 2N6043G is a Darlington Bipolar NPN Transistor structured for high current and voltage operation. It features an 8 ampere maximum DC collector current and a collector-emitter voltage rating of 60 volts DC. The device uses a 3-pin TO-220 package and is intended primarily for amplifier and low-speed switching applications in industrial, manufacturing, and power electronics.

The transistor provides high DC current gain with typical hFE values around 2500 at 4.0 A collector current. Low saturation voltage (VCE(sat)) ensures energy-efficient switching. It includes built-in base-emitter shunt resistors enhancing stability and simplifying biasing. The package type is designed for through-hole mounting facilitating secure PCB integration.

Key features making the 2N6043G suitable for electronic component applications include robust thermal performance (operating temp. from -65°C to 150°C), monolithic construction, and a 75 W maximum power dissipation capability. This transistor complements matched PNP devices (e.g., 2N6042) in push-pull and amplifier circuits.

This transistor supports a maximum DC collector current of 8 amperes. The maximum collector-emitter voltage rating is 60 volts DC for reliable operation. It features low collector-emitter saturation voltage of 2.0 Vdc at 4.0 Adc.

The transistor configuration is single with NPN polarity for versatile use. Designed for through-hole mounting with a durable TO-220 package style. Offers a high minimum DC current gain (hFE) of 1000 for efficient amplification.

Supports operation between temperatures of -65°C to 150°C for industrial robustness. Features built-in base-emitter shunt resistors and monolithic construction for performance stability. Ideal for general purpose amplification and low speed switching in industrial and commercial electronics.

This product is made in China and is supplied new. It is widely used in electronics manufacturing, power supply controls, and industrial amplifier circuits. Explore additional semiconductor and bipolar transistor products on EnvMart for your design and manufacturing needs.

Explore more products in our Discrete Semiconductors category.