ROHM 2SC4617TLQ is an NPN small-signal transistor designed for surface mounting in compact electronic applications. It features a maximum DC collector current of 150 mA and a collector-emitter voltage of 50 V, making it ideal for low-voltage switching and amplification tasks.
The device comes in a 3-pin SOT-416 (SC-75A) package with small dimensions of 1.7 mm length, 0.9 mm width, and 0.8 mm height, facilitating high-density PCB layouts. It operates efficiently up to a maximum power dissipation of 150 mW and supports a minimum DC current gain (hFE) of 120, providing effective signal amplification.
With a maximum transition frequency of 180 MHz, this transistor is suitable for high-frequency applications including RF and communication circuits. The transistor supports a maximum operating temperature of 150°C, ensuring durability and consistent performance under thermal stress.
Other key electrical parameters include a collector-base voltage of 60 V and emitter-base voltage of 7 V, emphasizing its use in robust electronic circuits. This single transistor device is a reliable choice for discrete semiconductor applications in automotive, industrial, and consumer electronics contexts.
Package contents typically include 1 unit of the 2SC4617TLQ transistor supplied on a reel format, ready for automated assembly and improved production efficiency in manufacturing environments.
For industrial and laboratory uses, this transistor is well-suited in devices requiring switching or amplification in the 50 V and 150 mA range with surface mount compatibility. It meets demanding engineering requirements in power and electronic control systems.
Explore more Bipolar Transistors and semiconductor products in the ROHM range on EnvMart for your electronics manufacturing and design needs. Maximum DC Collector Current of 150 mA ensures moderate power handling capabilities.
Maximum Collector Emitter Voltage rating of 50 V suitable for low-voltage switching circuits. Compact 3-pin SOT-416 package designed for surface mounting with dimensions 1.7 mm length, 0.9 mm width, and 0.8 mm height. Minimum DC current gain (hFE) of 120 for stable amplification in signal processing.
Maximum transition frequency of 180 MHz suitable for high-frequency amplification. Maximum Power Dissipation of 150 mW for reliable operation under rated conditions. NPN transistor configuration suitable for amplification and switching.
Maximum operating temperature up to 150°C ensuring robust thermal performance. Designed for use in electronic components, power connectors, and semiconductor applications.
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