STMicroelectronics 1200 V 10 A Schottky Diode Through Hole DO-247 Package STPSC10H12WL

STMicroelectronics STPSC10H12WL is a high-performance Schottky diode designed for power electronics applications. It is fabricated on a silicon carbide (SiC) substrate, which provides a wide band-gap material base, enabling a low forward voltage drop and excellent switching characteristics. This diode has a peak reverse repetitive voltage rating of 1200 V and a maximum continuous forward current of 10 A, making it suitable for demanding power and industrial circuits.

The device is housed in a DO-247 package that supports through-hole mounting, offering mechanical robustness and easy installation. It features a two-pin design and provides excellent surge current capability, with a peak non-repetitive forward surge current of 420 A. Its maximum forward voltage is 2.25 V, which contributes to reduced power loss and increased efficiency in power management systems.

Operating temperature range spans from -40°C to a maximum of 175°C, ensuring reliable functionality in harsh environments often encountered in industrial, HVAC, and manufacturing applications. The SiC Schottky design results in no or negligible reverse recovery current and minimal capacitive turn-off characteristics, independent of temperature, which significantly reduces switching losses and electromagnetic interference.

This diode is especially suited for power factor correction (PFC) circuits and secondary side rectification in switch-mode power supplies and other high-efficiency power conversion systems. Its robustness under transient conditions and efficient switching behavior enhance overall system performance and reliability.

Package dimensions include length of 16.26 mm, height of 21.46 mm, width of 5.31 mm, and a diameter of 3.56 mm. The product complies with no specific automotive or industrial standards but provides efficient and durable semiconductor diode performance under demanding operating conditions.

Maximum continuous forward current of 10 A ensures robust current handling. High peak reverse repetitive voltage of 1200 V supports high voltage applications. Low forward voltage of 2.25 V reduces conduction losses. Wide operating temperature range from -40°C to 175°C allows use in harsh environments.

Peak surge current of 420 A enhances transient robustness. Schottky diode technology minimizes reverse recovery losses. Two-pin DO-247 package facilitates through-hole mounting. Manufactured on silicon carbide substrate for enhanced performance.

This Schottky diode from STMicroelectronics is a reliable choice for industrial, power control, manufacturing, and HVAC systems requiring efficient high voltage rectification. Explore additional Schottky Diodes and rectifier products to suit related power electronic needs on EnvMart.