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STMicroelectronics MOSFET Gate Driver, 4 A, 3.1V Supply, 8-Pin SO-8 Package STGAP2SICSNCTR
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Model | STGAP2SICSNCTR |
| Series | STGAP |
| Output Current | 4A |
| Maximum Operating Temperature | 125°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 8 |
| Minimum Supply Voltage | 3.1V |
| Fall Time | 30ns |
| Driver Type | MOSFET |
| Overall input-output propagation delay | 75 ns |
Key Features
- Provides galvanic isolation between gate driving channel and low voltage control circuitry.
- Offers rail-to-rail outputs for mid and high power applications.
- Configurable output pins for turn-on and turn-off optimization or Miller CLAMP function.
- Includes UVLO and thermal shutdown protection for reliability.
- Supports standby mode to reduce idle power consumption.
- Has dual input pins for controlling signal polarity and hardware interlocking.
- Delivers fast propagation delay of 75 ns for high PWM control accuracy.
- Operates reliably between -40°C and 125°C.
Product Description
STMicroelectronics STGAP2SICSNCTR is a high-performance MOSFET gate driver designed to provide galvanic isolation between the gate driving channel and low voltage control and interface circuitry. With a 4 A output current capability and rail-to-rail outputs, this device is suitable for mid and high power industrial applications including power conversion and motor driver inverters.
The driver is available in two configurations: one with separate output pins to enable independent optimization of turn-on and turn-off timings using dedicated gate resistors, and another with a single output pin featuring a Miller CLAMP function that prevents gate spikes during fast switching in half-bridge topologies. These options provide design flexibility and reduce the external component count.
Protection features integrated into the device include an undervoltage lockout (UVLO) optimized for SiC MOSFETs, thermal shutdown to enhance system reliability, and dual input pins to select control signal polarity and implement hardware interlocking to prevent cross-conduction due to controller malfunction. The input-to-output propagation delay is tightly controlled within 75 nanoseconds, ensuring precise PWM control.
Additional features include a standby function to minimize idle power consumption and a high galvanic isolation level of 4.8 kVPK, supporting safe operation in demanding industrial and power management environments. Its narrow body SO-8 package facilitates space-saving PCB layouts.
This MOSFET gate driver is ideal for industrial power electronics, motor control systems, and power conversion applications where high integration, protection, and precision control are required.
Provides galvanic isolation between gate driver and control circuits. Supports 4 A output current with rail-to-rail drive capability. Configurable for separate turn-on/off or Miller clamp operation. Includes undervoltage lockout and thermal shutdown protections.
Dual input pins for control polarity and hardware interlocking. Fast 75 ns input-output propagation delay for accurate PWM control. Standby mode reduces idle power consumption. 4.8 kVPK galvanic isolation for enhanced safety.
Narrow body SO-8 package for compact design. Operating temperature range: -40°C to 125°C. Explore more MOSFET Gate Drivers and power management ICs at EnvMart for your industrial and commercial applications.
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Frequently Asked Questions
This model has an output current capability of 4 A, making it suitable for mid and high power applications.
It operates reliably within a temperature range of -40°C to 125°C.
This device is available in a narrow body SO-8 package, which facilitates compact PCB layouts.
It includes undervoltage lockout (UVLO) and thermal shutdown protection to enhance system reliability.
The overall input-to-output propagation delay is tightly controlled at 75 nanoseconds, ensuring precise PWM control.
It can be configured for separate turn-on and turn-off optimization or a Miller CLAMP function to prevent gate spikes during fast switching.
The minimum supply voltage required for this device is 3.1V.
The standby mode reduces idle power consumption, enhancing energy efficiency during non-active periods.
It provides a high galvanic isolation level of 4.8 kVPK, supporting safe operation in demanding environments.
The fall time for this model is specified at 30 nanoseconds, contributing to its fast switching capabilities.
This device features a pin count of 8, suitable for various control configurations.
The country of origin for this model is India.
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