STMicroelectronics MOSFET Gate Driver, 4 A, 36-Pin SO-36W Package, 5.5 V Maximum Supply Voltage STGAP2SICDTR

STMicroelectronics STGAP2SICDTR is a dual MOSFET Gate Driver designed for Silicon Carbide (SiC) MOSFET devices, featuring galvanic isolation between each gate driving channel and the low voltage control circuitry. It supports a robust output current of 4 A and is housed in a wide-body 36-pin SO-36W package, operating at a maximum supply voltage of 5.5 V. This gate driver is engineered for high power applications including power conversion systems and industrial motor drivers.

The device's independent output pins allow for precise optimization of turn-on and turn-off by using dedicated gate resistors. Its Miller CLAMP function effectively avoids gate voltage spikes during rapid switching events, particularly useful in half-bridge topologies. Protection mechanisms such as undervoltage lockout (UVLO), thermal shutdown, and dedicated shutdown (SD) and brake pins ensure high reliability and safety in demanding industrial environments.

Additional features include a configurable interlocking function to prevent shoot-through conditions, which can be disabled for parallel channel operation. The gate driver supports TTL and CMOS input logic levels with built-in hysteresis to minimize noise sensitivity.

With a low input to output propagation delay (within 75 ns), the device provides excellent pulse width modulation (PWM) control accuracy. Its standby mode allows for reduced power consumption during idle states, enhancing overall system energy efficiency. The device offers strong galvanic isolation up to 6 kV, making it suitable for harsh industrial and power management applications.

This product is ideal for industrial motor drives, inverters, power supplies, and other high power motor control and conversion applications where reliability and precision gate driving are critical.

Dual gate driver with galvanic isolation for SiC MOSFETs. 4 A peak output current with rail-to-rail drive capability. Independent turn-on and turn-off optimization enabled by separate outputs. Miller CLAMP feature to prevent gate spikes during switching.

Configurable interlocking function to prevent shoot-through. Integrated UVLO and thermal shutdown protection. 3.3 V and 5 V TTL/CMOS input logic with hysteresis. Dedicated shutdown (SD) and brake pins for safety control.

6 kV galvanic isolation for high voltage industrial environments. Low propagation delay (.