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Nexperia 1-Element Bi-Directional TVS Diode, 45 W, 2-Pin UMD PESD5V0U1BA,115
Specifications
| Country of Origin | Singapore |
|---|---|
| Brand | Nexperia |
| Height | 1.05mm |
| Length | 1.8mm |
| Model | PESD5V0U1BA,115 |
| Width | 1.35mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | UMD |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Number of Elements per Chip | 1 |
| Diode Configuration | Single |
| Direction Type | Bi-Directional |
| Minimum Breakdown Voltage Vbr | 5.5V |
| Maximum Reverse Stand-off Voltage Vwm | 5V |
| Peak Pulse Power Dissipation Pppm | 45W |
| Test Current It | 5mA |
| Maximum Reverse Leakage Current | 100nA |
Key Features
- This diode has a peak pulse power dissipation of 45 W.
- It features a 2-pin UMD surface mount package for easy PCB integration.
- The device supports bi-directional transient voltage suppression for enhanced circuit protection.
- Operating temperature ranges from -65°C to 150°C to suit industrial applications.
- Minimum breakdown voltage is 5.5 V with a maximum reverse stand-off voltage of 5 V.
- Designed with a single diode element per chip and ultra-low leakage current of 100 nA.
- Ideal for protecting sensitive electronics against electrostatic discharge spikes.
- Compact dimensions of 1.8 mm length, 1.35 mm width, and 1.05 mm height.
Product Description
Nexperia PESD5V0U1BA,115 is a 1-element bi-directional Transient Voltage Suppression (TVS) diode designed for ultra low capacitance ElectroStatic Discharge (ESD) protection. Packaged in a 2-pin UMD surface mount device, it offers peak pulse power dissipation of 45 W to safeguard sensitive electronic components.
This diode features a minimum breakdown voltage of 5.5 V and a maximum reverse stand-off voltage of 5 V, providing reliable transient voltage suppression for data lines or other circuit nodes vulnerable to voltage spikes. The device operates within a temperature range of -65°C to 150°C, suitable for industrial, telecommunications, and automotive-grade electronics.
With ultra-low leakage current of 100 nA and a test current of 5 mA, the PESD5V0U1BA,115 delivers efficient protection while maintaining signal integrity. Its compact size of 1.8 mm by 1.35 mm by 1.05 mm enables use in high-density PCB layouts.
This component is ideal for application in electronic devices requiring ESD protection, such as consumer electronics, computer peripherals, communication equipment, and automotive systems, enhancing device longevity and reliability.
This diode offers 45 W peak pulse power dissipation capacity. It is a single-element bi-directional TVS Diode with a 2-pin UMD surface mount package. Extends protection by clamping transient overvoltages and preventing circuit damage.
Wide operating temperature range of -65°C to 150°C for harsh environments. Low leakage current enhances device performance and reduces power loss. Small form factor enables integration in compact electronic designs. Manufactured in Singapore ensuring consistent quality standards.
Absence of automotive-specific standards but suitable for robust industrial use. Explore the Nexperia range on EnvMart for advanced electronic components crafted to deliver durable and precise industrial-grade performance in semiconductor applications.
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Frequently Asked Questions
The diode has a peak pulse power dissipation of 45 W, which helps safeguard sensitive electronic components from voltage spikes.
It operates within a temperature range of -65°C to 150°C, making it suitable for harsh industrial environments.
This model has compact dimensions of 1.8 mm in length, 1.35 mm in width, and 1.05 mm in height, allowing for integration in high-density PCB layouts.
It features a single-element bi-directional configuration, designed for effective transient voltage suppression.
The maximum reverse stand-off voltage is 5 V, providing reliable protection against transient overvoltages.
The minimum breakdown voltage is 5.5 V, ensuring effective clamping of voltage spikes in electronic circuits.
It is packaged in a 2-pin UMD surface mount configuration, facilitating easy integration into printed circuit boards.
The maximum reverse leakage current is 100 nA, which helps maintain signal integrity and reduces power loss.
The test current for this model is 5 mA, which is used to evaluate its performance under specified conditions.
This diode is manufactured in Singapore, ensuring consistent quality standards in production.
It is ideal for protecting sensitive electronics in consumer devices, computer peripherals, communication equipment, and automotive systems against electrostatic discharge spikes.
The diode features ultra-low leakage current and a wide operating temperature range, contributing to its efficiency and reliability in various applications.
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