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Microchip N-Channel MOSFET 130 mA 450 V Depletion Mode 3-Pin TO-92 DN3545N3-G

Category Semiconductor Brand Microchip Condition New

Specifications

Country of Origin India
Brand Microchip
Height 5.33mm
Length 5.2mm
Model DN3545N3-G
Width 4.19mm
Mount Type Through Hole
Series DN3545
Maximum Operating Temperature 150°C
Package Type TO-92
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 130mA
Maximum Drain Source Voltage Vds 450V
Maximum Drain Source Resistance Rds 20Ω
Channel Mode Depletion
Maximum Power Dissipation Pd 740mW
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.8V

Key Features

  • Designed for high breakdown voltage and fast switching applications.
  • Exhibits low input capacitance and high input impedance.
  • Features low on-resistance and minimal leakage current.
  • Suitable for use as normally-on switches and solid state relays.
  • Operates reliably in temperatures ranging from -55°C to 150°C.
  • Compact TO-92 package suitable for through-hole mounting with 3 pins.
  • Typical forward voltage of 1.8 V enhances efficiency in circuits.
  • Applications include power supplies, converters, telecom equipment, and linear amplifiers.

Product Description

Microchip DN3545N3-G is a high-voltage N-Channel MOSFET transistor operating in depletion mode, designed for discrete semiconductor applications requiring low input leakage, fast switching speeds, and reliable performance. It offers a maximum continuous drain current of 130 mA and can withstand up to 450 V across its drain-source terminals. Packaged in a durable TO-92 encapsulation with 3 pins, it supports through-hole mounting, making it ideal for industrial, laboratory, and commercial electronics assembly.

This MOSFET features a low on-resistance and high input impedance, which ensures efficient power management and reduced signal losses. Its channel mode is depletion type, which means it acts as a normally-on switch, making it suited for applications such as solid state relays, constant current sources, and linear amplifiers. The device also operates across a broad temperature range from -55°C to 150°C, suitable for harsh environments including telecom infrastructure and power supply circuits.

With a maximum gate-source voltage tolerance of ±20 V and forward voltage of 1.8 V, this MOSFET maintains stable operation and low power dissipation up to 740 mW. Its dimensions of approximately 5.33 mm height, 5.2 mm length, and 4.19 mm width provide a compact form factor for space-constrained designs.

High breakdown voltage and fast switching speeds enable advanced power electronics applications. Low input capacitance reduces switching losses and improves efficiency. High input impedance ensures minimal leakage current in circuits.

Robust packaging allows through-hole assembly in industrial electronics. Suitable for use in solid state relays, converters, amplifiers, and telecom systems. Wide operating temperature range supports diverse environmental conditions.

Compact TO-92 package with 3 pins fits standard PCB layouts for easy integration.

This Microchip MOSFET is ideal for industrial, manufacturing, electronics production, and power management applications requiring reliable, high-voltage, normally-on transistor technology. Browse the Microchip brand and our Semiconductor category on EnvMart for a comprehensive selection of electronic components and MOSFET solutions.

Microchip N-Channel MOSFET 130 mA 450 V Depletion Mode 3-Pin TO-92 DN3545N3-G
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Frequently Asked Questions

The maximum continuous drain current for the Microchip DN3545N3-G is 130 mA.

It can withstand a maximum drain-source voltage of 450 V.

This model is packaged in a TO-92 type, which supports through-hole mounting.

The operating temperature range is from -55°C to 150°C.

The typical forward voltage for this MOSFET is 1.8 V.

The DN3545N3-G has 3 pins.

The maximum power dissipation for this MOSFET is 740 mW.

It features a depletion type N-channel.

The maximum gate-source voltage tolerance is ±20 V.

The dimensions are approximately 5.33 mm in height, 5.2 mm in length, and 4.19 mm in width.

This MOSFET is suitable for applications such as power supplies, converters, telecom equipment, and linear amplifiers.

The maximum drain-source resistance is 20 Ω.

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