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| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 1.1mm |
| Length | 2.9mm |
| Model | IMN10T108 |
| Width | 1.6mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-457 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Maximum Power Dissipation Pd | 300mW |
| Diode Configuration | Isolated |
| Peak Non-Repetitive Forward Surge Current Ifsm | 4A |
| Maximum Forward Voltage Vf | 1.2V |
| Peak Reverse Recovery Time trr | 4ns |
| Maximum Forward Current If | 300mA |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 80V |
ROHM IMN10T108 Switching Diode is an isolated silicon junction device designed for efficient switching applications. It supports a maximum forward current of 300 mA and withstands peak reverse voltages up to 80 V, making it suitable for discrete semiconductor electronic circuits.
This diode comes in a compact surface mount 6-pin SOT-457 package, allowing for easy PCB assembly in high-density layouts. Its low forward voltage of 1.2 V reduces power loss during operation. The device efficiently handles power dissipation of up to 300 mW, enabling it to sustain reliable switching performance in demanding environments.
The IMN10T108 features a fast peak reverse recovery time of 4 nanoseconds, critical for high-speed switching applications such as power management, signal modulation, and protection circuits in industrial, consumer electronics, and communication devices.
Operating temperatures ranging from -55°C to 150°C ensure durability across a wide range of environmental conditions. The diode also tolerates peak non-repetitive forward surge currents up to 4 A, providing additional robustness against transient events.
Physical dimensions of this switching diode are small with 2.9 mm length, 1.6 mm width, and 1.1 mm height, optimizing it for compact electronic assemblies. This product does not conform to automotive standards but meets general semiconductor requirements for quality and reliability.
Maximum forward current 300 mA for dependable switching. Peak forward voltage 1.2 V ensures efficient conduction. Compact 6-pin SOT-457 surface mount package. Wide operating temperature range from -55°C to 150°C. 300 mW maximum power dissipation for stable operation.
Fast 4 ns reverse recovery time for high-frequency switching. 4 A peak non-repetitive surge current tolerance. Small form factor with 2.9 mm length, 1.6 mm width, 1.1 mm height. Ideal for industrial, electronic, and communication device use.
Standard silicon junction diode technology from ROHM.
This switching diode is suitable for industrial electronics, telecommunications equipment, power supplies, and general consumer electronics applications requiring reliable, fast-Switching Diodes. Explore more electronic components in the Semiconductor category at EnvMart.
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