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ROHM Switching Diode Isolated Silicon Junction 300 mA 80 V 6-Pin SOT-457 IMN10T108

Category Switching Diode Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Height 1.1mm
Length 2.9mm
Model IMN10T108
Width 1.6mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-457
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Pin Count 6
Maximum Power Dissipation Pd 300mW
Diode Configuration Isolated
Peak Non-Repetitive Forward Surge Current Ifsm 4A
Maximum Forward Voltage Vf 1.2V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 300mA
Maximum Peak Reverse Repetitive Voltage Vrrm 80V

Key Features

  • Maximum forward current is 300 mA, ensuring reliable switching performance.
  • Peak forward voltage is low at 1.2 V for efficient operation.
  • Package type SOT-457 with 6 pins provides compact surface mount installation.
  • Designed to operate in temperature range from -55°C to 150°C for durability.
  • Maximum power dissipation of 300 mW supports robust handling of power loads.
  • Reverse recovery time of 4 nanoseconds enables fast switching in circuits.
  • Peak non-repetitive surge current tolerance of 4 A protects against transient surges.
  • Ideal for use in electronic devices requiring switching diode performance.

Product Description

ROHM IMN10T108 Switching Diode is an isolated silicon junction device designed for efficient switching applications. It supports a maximum forward current of 300 mA and withstands peak reverse voltages up to 80 V, making it suitable for discrete semiconductor electronic circuits.

This diode comes in a compact surface mount 6-pin SOT-457 package, allowing for easy PCB assembly in high-density layouts. Its low forward voltage of 1.2 V reduces power loss during operation. The device efficiently handles power dissipation of up to 300 mW, enabling it to sustain reliable switching performance in demanding environments.

The IMN10T108 features a fast peak reverse recovery time of 4 nanoseconds, critical for high-speed switching applications such as power management, signal modulation, and protection circuits in industrial, consumer electronics, and communication devices.

Operating temperatures ranging from -55°C to 150°C ensure durability across a wide range of environmental conditions. The diode also tolerates peak non-repetitive forward surge currents up to 4 A, providing additional robustness against transient events.

Physical dimensions of this switching diode are small with 2.9 mm length, 1.6 mm width, and 1.1 mm height, optimizing it for compact electronic assemblies. This product does not conform to automotive standards but meets general semiconductor requirements for quality and reliability.

Maximum forward current 300 mA for dependable switching. Peak forward voltage 1.2 V ensures efficient conduction. Compact 6-pin SOT-457 surface mount package. Wide operating temperature range from -55°C to 150°C. 300 mW maximum power dissipation for stable operation.

Fast 4 ns reverse recovery time for high-frequency switching. 4 A peak non-repetitive surge current tolerance. Small form factor with 2.9 mm length, 1.6 mm width, 1.1 mm height. Ideal for industrial, electronic, and communication device use.

Standard silicon junction diode technology from ROHM.

This switching diode is suitable for industrial electronics, telecommunications equipment, power supplies, and general consumer electronics applications requiring reliable, fast-Switching Diodes. Explore more electronic components in the Semiconductor category at EnvMart.

ROHM Switching Diode Isolated Silicon Junction 300 mA 80 V 6-Pin SOT-457 IMN10T108
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Frequently Asked Questions

The maximum forward current for this model is 300 mA, ensuring reliable switching performance.

This diode can withstand peak reverse voltages up to 80 V, making it suitable for various electronic circuits.

The IMN10T108 is packaged in a compact 6-pin SOT-457 surface mount configuration, facilitating easy PCB assembly.

It operates effectively in a temperature range from -55°C to 150°C, ensuring durability in various environments.

The maximum power dissipation for this model is 300 mW, allowing it to handle power loads efficiently.

This diode features a fast peak reverse recovery time of 4 nanoseconds, which is critical for high-speed switching applications.

It tolerates peak non-repetitive surge currents up to 4 A, providing protection against transient surges.

The dimensions of this switching diode are 2.9 mm in length, 1.6 mm in width, and 1.1 mm in height.

This model features an isolated diode configuration, suitable for discrete semiconductor applications.

It is ideal for use in industrial electronics, telecommunications equipment, power supplies, and general consumer electronics.

The peak forward voltage is low at 1.2 V, which enhances its efficiency during operation.

The SOT-457 package of this diode has a pin count of 6, allowing for compact installation in electronic assemblies.

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