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Microchip 1700 V 50 A Schottky Barrier Diode Through Hole SOT-227 MSC2X50SDA170J
Specifications
| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Model | MSC2X50SDA170J |
| Mount Type | Through Hole |
| Series | MSC2 |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-227 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Maximum Continuous Forward Current If | 50A |
| Peak Reverse Repetitive Voltage Vrrm | 1700V |
| Rectifier Type | Schottky |
| Maximum Forward Voltage Vf | 1.8V |
Key Features
- Utilizes silicon carbide technology for enhanced performance over silicon diodes.
- Offers low forward voltage drop of 1.8 V, minimizing power loss.
- Exhibits low leakage current and no reverse recovery, maximizing efficiency.
- Operational temperature range from -55°C to 175°C ensures reliability under harsh conditions.
- RoHS compliant, meeting environmental standards.
- Avalanche energy rated for rugged industrial uses.
- Designed for high voltage applications in power electronics and rectification.
- Supplied in tube packaging suitable for automated assembly.
Product Description
Microchip MSC2X50SDA170J is a Schottky Barrier Diode featuring silicon carbide technology that significantly improves performance compared to conventional silicon diodes. Rated for a peak reverse repetitive voltage of 1700 V and a maximum continuous forward current of 50 A, it is designed for demanding power and high voltage industrial applications.
The diode is housed in a SOT-227 package and supports through-hole mounting, which is ideal for robust assembly on printed circuit boards and enhances mechanical stability.
This device offers a low forward voltage of 1.8 V, causing minimal power dissipation during operation, which results in increased system efficiency and lower system cooling requirements. The diode also benefits from no reverse recovery losses and low leakage current, making it suitable for high-frequency applications and improving overall system reliability.
The operating temperature range from -55°C to 175°C ensures that the diode performs reliably in harsh environmental conditions typically encountered in industrial, manufacturing, HVAC, water treatment, and power conversion systems.
It is RoHS compliant, supporting environmental safety regulations worldwide, and is avalanche energy rated, providing ruggedness under transient voltage conditions.
The MSC2X50SDA170J is commonly employed in rectification tasks within high voltage power supplies, industrial power electronics, motor drives, and other applications where high efficiency, reliability, and power density are critical.
Utilizes silicon carbide technology for superior electrical performance over silicon diodes. Low forward voltage drop of 1.8 V reduces energy loss and heating. Wide operating temperature range ensures application versatility.
Compliant with RoHS environmental standards. Reliable through-hole SOT-227 package construction. Suitable for industrial and high voltage power management applications. This product is an essential component for engineers and designers seeking performance and reliability in power diode applications.
Browse more Schottky Barrier Diodes and electronic components from Microchip on EnvMart for quality assurance and superior technical support.
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Frequently Asked Questions
The maximum reverse repetitive voltage rating for this model is 1700 V.
It can handle a maximum continuous forward current of 50 A.
The forward voltage drop of this diode is 1.8 V, which helps minimize power loss during operation.
The operating temperature range for this model is from -55°C to 175°C.
This diode supports through-hole mounting, which is suitable for robust assembly on printed circuit boards.
Yes, it is RoHS compliant, meeting environmental safety regulations worldwide.
It is housed in a SOT-227 package type.
This model is designed for high voltage applications in power electronics, rectification tasks, and industrial power supplies.
The low leakage current enhances the efficiency of the diode, making it suitable for high-frequency applications.
It utilizes silicon carbide technology, which offers enhanced performance compared to conventional silicon diodes.
The diode is avalanche energy rated, providing ruggedness under transient voltage conditions.
The country of origin for this diode is India.
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