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Winbond SLC NAND 8 GB Parallel Flash Memory 63-Pin VFBGA W29N08GZBIBA
Specifications
| Country of Origin | India |
|---|---|
| Brand | Winbond |
| Height | 600μm |
| Length | 11.1mm |
| Cell Type | SLC NAND |
| Model | W29N08GZBIBA |
| Width | 11.1mm |
| Mount Type | Surface |
| Density | 8Gbit (2 chip stacked solution) |
| Series | W29N08GZ |
| Industrial | -40°C to 85°C |
| Maximum Operating Temperature | 85°C |
| Package Type | VFBGA |
| Minimum Operating Temperature | -40°C |
| Memory size | 8GB |
| Interface Type | Parallel |
| Pin Count | 63 |
| Maximum Supply Voltage | 1.95V |
| Minimum Supply Voltage | 1.7V |
| Maximum Clock Frequency | 40MHz |
| Organisation | 1024 x 8 bit |
| Number of Bits per Word | 8 |
| Maximum Random Access Time | 25μs |
| Number of Words | 1024K |
| Bus Width | x8/x16 |
| Vcc | 1.7V to 1.95V |
| Random read | 25us |
| Sequential read cycle | 35ns |
| Page program time | 250us(typ.) |
| Block erase time | 2ms(typ.) |
| Read | 13mA(typ.) |
| Program/Erase | 13mA(typ.) |
| CMOS standby | 20uA(typ.) |
Key Features
- High-density 8 Gbit memory using 2 chip stacked solution.
- Operates with low supply voltage ranging from 1.7V to 1.95V.
- Supports parallel interface with bus widths of x8 and x16.
- Industrial operating temperature range of -40°C to 85°C ensures operational stability.
- Fast read and write performance with 25μs random read and 250μs page program time.
- Endurance up to 100,000 erase/program cycles with 10-year data retention.
- Uniform 2KB+64B page size with block size of 64 pages.
- Low power consumption with 13mA read and program current, and 20µA CMOS standby.
Product Description
Winbond W29N08GZBIBA is a Single-Level Cell (SLC) NAND Flash Memory device featuring 8 GB memory capacity, housed in a 63-pin Very Fine Ball Grid Array (VFBGA) package. This surface mount component is designed for high reliability and performance in industrial applications, supporting parallel interface communications.
It has a memory organization of 1024 x 8 bit with a clock speed up to 40 MHz. The device operates at a supply voltage range of 1.7V to 1.95V and withstands industrial temperature conditions from -40°C to 85°C. With a height of 600 μm and dimensions of 11.1 mm length and width, it is suitable for space-efficient PCB layouts.
The memory uses SLC technology delivering high endurance of up to 100,000 erase/program cycles and retains data reliably for 10 years. The device supports a standard NAND command set and additional features like copy back and two-plane operation, enhancing usability in embedded systems.
Performance metrics include a maximum random access time of 25 microseconds, a sequential read cycle of 35 nanoseconds, a typical page program time of 250 microseconds, and block erase time of 2 milliseconds. Power consumption is optimized with a typical read current of 13 mA, similar program/erase operation current, and low CMOS standby current of 20 microamperes.
High-density 8 Gbit memory using 2 chip stacked solution. Operates on low supply voltage range from 1.7V to 1.95V. High performance with fast access and program timings. Industrial temperature range ensures durability in harsh environments.
Low power consumption suitable for energy-efficient designs. Standard NAND command set with extended features for advanced operations. Compact 63-pin VFBGA package meets space constraints in circuits.
This flash memory module is well-suited for applications in embedded systems, industrial electronics, power and connectors, and semiconductor devices. It provides robust storage capabilities for devices requiring reliable non-volatile memory.
Browse Winbond products and Flash Memory categories on EnvMart for a wide selection of semiconductor devices and components.
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Frequently Asked Questions
The Winbond W29N08GZBIBA has a memory capacity of 8 GB, utilizing a 2 chip stacked solution.
This model operates within an industrial temperature range of -40°C to 85°C, ensuring stability in harsh environments.
It operates with a supply voltage ranging from 1.7V to 1.95V.
The maximum clock frequency for this model is 40 MHz.
The typical read and program current is 13 mA, while the CMOS standby current is 20 µA.
The typical page program time for this flash memory is 250 microseconds.
This model has dimensions of 11.1 mm in length and width, with a height of 600 μm.
It supports a parallel interface with bus widths of x8 and x16.
The W29N08GZBIBA can endure up to 100,000 erase/program cycles.
The maximum random access time for this model is 25 microseconds.
It has a memory organization of 1024 x 8 bits.
This flash memory is well-suited for applications in embedded systems, industrial electronics, and semiconductor devices.
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