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Winbond 4 GB SLC NAND Parallel Flash Memory 48-Pin TSOP W29N04GVSIAA

Category Flash Memory Brand Winbond Condition New

Specifications

Country of Origin India
Brand Winbond
Height 1.05mm
Length 12.1mm
Cell Type SLC NAND
Model W29N04GVSIAA
Width 12mm
Mount Type Surface
Series W29N04GV
Maximum Operating Temperature 85°C
Package Type TSOP
Minimum Operating Temperature -40°C
Memory size 4GB
Interface Type Parallel
Pin Count 48
Maximum Supply Voltage 3.6V
Minimum Supply Voltage 2.7V
Supply Current 35mA
Organisation 512M x 8 Bit
Number of Bits per Word 8
Maximum Random Access Time 25μs
Number of Words 512M
Bus Width x8
Random read 25us
Page program time 250us(typ.)
Block erase time 2ms(typ.)

Key Features

  • Memory size is 4GB with 512M x 8 Bit organisation.
  • Interface type is parallel with a bus width of x8.
  • Low supply voltage range from 2.7V to 3.6V for efficient power use.
  • Operating temperature range of -40°C to 85°C suitable for industrial applications.
  • High speed random access time of 25 microseconds ensures fast data retrieval.
  • Page program time typically 250 microseconds and block erase time typically 2 milliseconds.
  • Surface-mount TSOP package with 48 pins for easy PCB integration.
  • SLC NAND cell type provides high reliability and endurance.

Product Description

Winbond W29N04GVSIAA is a 4GB SLC NAND parallel flash memory designed for reliable and high-performance data storage in electronic devices. It features a 48-pin Thin Small Outline Package (TSOP) suitable for surface mounting on printed circuit boards.

With a memory organisation of 512M x 8 bits and an interface type of parallel bus width x8, this flash memory ensures effective data communication and speedy operations. It supports a supply voltage range from 2.7V minimum to 3.6V maximum, allowing low power usage in embedded systems.

The device operates efficiently across wide environmental conditions with a temperature tolerance from -40°C to 85°C, making it suitable for industrial and automotive sector applications.

It offers a maximum random access time of 25 microseconds, a typical page program time of 250 microseconds, and a block erase time of 2 milliseconds, ensuring swift read/write cycles to handle demanding storage requirements.

This SLC NAND flash memory incorporates a single-level cell architecture known for superior endurance and data retention compared to multi-level cell types. The compact physical dimensions of 12.1mm length, 12mm width, and 1.05mm height support space-constrained designs.

Memory capacity of 4GB with 512M x 8 bit organisation. SLC NAND cell technology for enhanced reliability. Parallel interface with 48-pin TSOP surface-mount packaging. Wide operating temperature range (-40°C to 85°C) for industrial use.

Typical page program and block erase times of 250µs and 2ms respectively. Low supply current consumption of 35mA. Random access time optimized to 25µs for fast performance. Compact size supports embedded and industrial electronics.

Compatible with designs requiring stable and durable flash memory. This Flash Memory product is ideal for applications in industrial electronics, embedded systems, automotive electronics, and consumer devices requiring non-volatile storage.

Explore more semiconductor products and gain detailed technical support at EnvMart for your design and manufacturing needs.

Winbond 4 GB SLC NAND Parallel Flash Memory 48-Pin TSOP W29N04GVSIAA
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Frequently Asked Questions

The memory capacity of this model is 4GB, organized as 512M x 8 bits.

It utilizes a parallel interface with a bus width of x8.

This unit has dimensions of 12.1mm in length, 12mm in width, and 1.05mm in height.

It operates within a temperature range of -40°C to 85°C, making it suitable for industrial applications.

The maximum random access time is 25 microseconds, ensuring fast data retrieval.

The typical page program time is 250 microseconds.

The typical block erase time is 2 milliseconds.

It supports a supply voltage range from 2.7V to 3.6V.

This flash memory features a total of 48 pins in its TSOP package.

It uses SLC NAND cell architecture, which provides high reliability and endurance.

The supply current consumption is 35mA.

It is suitable for applications in industrial electronics, embedded systems, automotive electronics, and consumer devices requiring non-volatile storage.

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