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Microchip Schottky Barrier Diode 1200 V 30 A TO-247 MSC030SDA120BCT
Specifications
| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Model | MSC030SDA120BCT |
| Mount Type | Through Hole |
| Series | MSC0 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Maximum Continuous Forward Current If | 30A |
| Peak Reverse Repetitive Voltage Vrrm | 1200V |
| Rectifier Type | Schottky |
| Peak Non-Repetitive Forward Surge Current Ifsm | 75A |
| Maximum Forward Voltage Vf | 1.8V |
Key Features
- Supports continuous forward current up to 30 A ensuring reliable power flow.
- Peak reverse repetitive voltage rated at 1200 V for robust voltage endurance.
- Low maximum forward voltage of 1.8 V reduces conduction losses.
- Operates efficiently within temperature range from -55°C to 175°C.
- Peak non-repetitive forward surge current capacity of 75 A for transient load handling.
- Constructed with RoHS compliant materials for environmental safety.
- Through hole mount type suited for easy PCB integration.
- Series MSC0 represents the designed semiconductor family for consistency in performance.
Product Description
Microchip MSC030SDA120BCT is a Schottky Barrier Diode designed for high performance power electronics requiring fast switching and efficiency. Housed in a TO-247 through hole package, it supports a maximum continuous forward current of 30 A and a peak reverse repetitive voltage of 1200 V, making it suitable for demanding power circuits.
This diode features a low forward voltage drop of 1.8 V, reducing conduction losses and improving overall energy efficiency. It is rated for operation in extreme environments with temperature tolerances from -55°C up to 175°C, ensuring reliability in industrial, automotive, and power supply applications.
The device can withstand a peak non-repetitive forward surge current of 75 A, providing robustness in transient load conditions. Manufactured in compliance with RoHS standards, it utilizes silicon carbide technology for zero recovery time and low leakage current, enhancing switching speed and circuit performance.
Typical use cases include power parallel diode applications, power supplies, inverters, and high-frequency switching circuits where efficient and durable Schottky diodes are required. The MSC0 series design guarantees reliable implementation across various electronics and electrical industrial setups.
Maximum continuous forward current of 30 A. Peak reverse voltage rating of 1200 V. Low forward voltage drop at 1.8 V for energy efficiency. Operating temperature range from -55°C to 175°C. Peak forward surge current of 75 A.
RoHS compliant silicon carbide Schottky diode. Through hole mount type in TO-247 package. Designed for power parallel diode and high frequency switching applications. Low leakage current and avalanche energy rated. Reliable semiconductor from Microchip's MSC0 series.
Explore more Microchip semiconductor offerings and Schottky diodes in the Electronics & Electricals category on EnvMart for specialized industrial and commercial applications.
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Frequently Asked Questions
The maximum continuous forward current for this model is 30 A.
It has a peak reverse repetitive voltage rating of 1200 V.
The maximum forward voltage drop is 1.8 V, which helps reduce conduction losses.
This diode operates efficiently within a temperature range from -55°C to 175°C.
The peak non-repetitive forward surge current capacity is rated at 75 A.
It is a through hole mount type, suitable for easy PCB integration.
This model is housed in a TO-247 package.
Yes, it is constructed with RoHS compliant materials for environmental safety.
This diode belongs to the MSC0 series, designed for consistent performance.
It is suitable for power parallel diode applications, power supplies, inverters, and high-frequency switching circuits.
It utilizes silicon carbide technology, which provides low leakage current and zero recovery time.
The country of origin for this diode is India.
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