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STMicroelectronics 8 kB Serial EEPROM 4-Pin WLCSP Serial-I2C 900 ns Access Time M24C08-FCT6TP/T

Category EEPROM Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 550μm
Length 700μm
Model M24C08-FCT6TP/T
Width 690μm
Mount Type Surface
Series M24C08-F
Maximum Operating Temperature 85°C
Package Type WLCSP
Minimum Operating Temperature -40°C
Memory size 8kB
Interface Type Serial-I2C
Pin Count 4
Automotive Standard AEC-Q100
Maximum Supply Voltage 5.5V
Minimum Supply Voltage 1.6V
Maximum Clock Frequency 400kHz
Organisation 1K x 8 bit
Number of Bits per Word 8
Maximum Random Access Time 900ns
Number of Words 1K

Key Features

  • Memory organized as 1K x 8 bits with 8 kB capacity.
  • Supports I2C interface with maximum clock frequency of 400 kHz.
  • Operates with supply voltage ranging from 1.6 V to 5.5 V across full temperature range.
  • Data retention of 200 years with robust automotive standard AEC-Q100 compliance.
  • Operating temperature range from -40 °C to +85 °C for industrial applications.
  • Page write and byte write complete within 5 ms for efficient data programming.
  • Write protection available for the entire memory array.

Product Description

STMicroelectronics M24C08-FCT6TP/T is an 8 kB serial EEPROM designed for applications requiring reliable non-volatile memory storage with fast access times. This device is packaged in a compact 4-pin WLCSP surface mount format, making it highly suitable for embedded electronic designs with limited PCB space.

The memory is organized as 1 Kbyte of EEPROM configured as 1K x 8 bits with a 16-byte page size. It supports I2C communication interface, operating at bus frequencies up to 400 kHz, facilitating seamless integration into serial communication systems.

The EEPROM operates over a wide supply voltage range of 1.6 V to 5.5 V, accommodating both low-voltage and standard-voltage applications. Its wide operating temperature range from -40 °C to +85 °C and compliance with the automotive AEC-Q100 standard ensure robust performance in harsh environments.

The device offers rapid random access times of 900 ns and supports both random and sequential read modes. It achieves write cycle times of less than 5 ms for both byte and page writes, enhancing programming efficiency. Additionally, write protection for the entire memory array offers data integrity assurance.

Memory Capacity: 8 kB (1K x 8 bit). Interface Type: Serial I2C up to 400 kHz. Package: 4-pin WLCSP for surface mounting. Supply Voltage: 1.6 V to 5.5 V. Operating Temperature: -40 °C to +85 °C. Data Retention: 200 years.

Maximum Random Access Time: 900 ns. Automotive Standard Compliant: AEC-Q100.

This EEPROM is ideal for use in automotive electronics, industrial control systems, consumer electronics, and other embedded storage applications requiring reliable and compact memory solutions. Its compliance and rugged specifications make it well suited for a broad range of industrial, automotive, and commercial deployments.

Explore the Electronics & Electricals > Semiconductor > EEPROM category on EnvMart for related memory chips and components compatible with industrial-level electronic designs.

STMicroelectronics 8 kB Serial EEPROM 4-Pin WLCSP Serial-I2C 900 ns Access Time M24C08-FCT6TP/T
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Frequently Asked Questions

This model has a memory capacity of 8 kB, organized as 1K x 8 bits.

It supports a maximum clock frequency of 400 kHz for the I2C interface.

This EEPROM operates with a supply voltage range of 1.6 V to 5.5 V.

The operating temperature range is from -40 °C to +85 °C.

The maximum random access time is 900 ns.

It is packaged in a 4-pin WLCSP (Wafer Level Chip Scale Package).

Byte and page write operations are completed within 5 ms.

It complies with the automotive standard AEC-Q100.

The memory is organized as 1K x 8 bits with a 16-byte page size.

Yes, it offers write protection for the entire memory array to ensure data integrity.

It is suitable for automotive electronics, industrial control systems, and consumer electronics requiring reliable non-volatile memory storage.

The dimensions are 700 μm in length, 690 μm in width, and 550 μm in height.

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