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onsemi 945 nm IR LED Side-Looking Through Hole Package QEE113
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Model | QEE113 |
| Mount Type | Through Hole |
| Number Of Leds | 1 |
| Package Type | Side-Looking |
| Number of Pins | 2 |
| Maximum Supply Voltage | 1.5V |
| Peak Wavelength | 945nm |
| LED Material | GaAs |
| Angle of half intensity | 50° |
| Radiant Intensity | 12mW/sr |
| Matched Photosensor | QSE113 |
| Package Material | clear epoxy |
Key Features
- Infrared LED with peak wavelength of 945 nm for precise IR applications.
- Side-looking through hole package enables directional IR emission at a 50° half intensity angle.
- Radiant intensity rated at 12 mW/sr ensuring effective IR illumination.
- Constructed with gallium arsenide (GaAs) LED material for high performance.
- Includes 2 pins and 1 LED per unit for simple circuit integration.
- Maximum supply voltage of 1.5 V suitable for low voltage systems.
- Encapsulated in clear epoxy plastic for durability and protection.
- Designed for use with matched photosensor QSE113 for optimized sensor performance.
Product Description
onsemi QEE113 is a high-performance infrared light emitting diode designed for industrial and electronic component applications. It operates with a peak wavelength of 945 nm, emitting infrared light suitable for communication, sensing, and illumination uses. The device is enclosed in a side-looking through hole package that directs the IR output at a 50° angle of half intensity, enabling targeted IR transmission.
This LED features gallium arsenide (GaAs) as the semiconductor material, known for its efficiency in infrared emission. The radiant intensity is rated at 12 mW/sr, ensuring reliable IR light output for demanding environments. It has two pins for easy through-hole mounting to circuit boards.
The device supports a maximum supply voltage of 1.5 V, making it compatible with low voltage power sources commonly used in electronic circuits. The encapsulation with clear epoxy protects the internal LED chip while allowing efficient transmission of IR light.
The QEE113 is ideally paired with the matched photosensor model QSE113 to create optimized IR sensing solutions. Though it lacks certifications for automotive use, it is well suited for laboratory, industrial, electronic components, and other commercial IR LED applications.
Infrared LED with peak wavelength of 945 nm for precise IR applications. Side-looking through hole package enables directional IR emission at a 50° half intensity angle. Radiant intensity rated at 12 mW/sr ensuring effective IR illumination.
Constructed with gallium arsenide (GaAs) LED material for high performance. Includes 2 pins and 1 LED per unit for simple circuit integration. Maximum supply voltage of 1.5 V suitable for low voltage systems. Encapsulated in clear epoxy plastic for durability and protection.
Designed for use with matched photosensor QSE113 for optimized sensor performance. No automotive standard compliance; ideal for general IR LED applications.
This IR LED is suitable for applications in electronics manufacturing, instrumentation, communication devices, and sensing technologies, offering reliable performance and easy integration.
Explore more high-quality LED and IR LED components on EnvMart for your industrial and commercial electronics projects.
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Frequently Asked Questions
The infrared LED has a peak wavelength of 945 nm, making it suitable for various IR applications.
The radiant intensity is rated at 12 mW/sr, ensuring effective IR illumination for demanding environments.
It is enclosed in a side-looking through hole package, designed to direct the IR output at a 50° angle of half intensity.
The maximum supply voltage for this model is 1.5 V, making it compatible with low voltage systems.
This infrared LED includes 2 pins for easy through-hole mounting to circuit boards.
The LED is constructed with gallium arsenide (GaAs), known for its efficiency in infrared emission.
It is designed for use with the matched photosensor model QSE113 for optimized sensor performance.
The angle of half intensity for the emitted IR light is 50°, allowing for targeted IR transmission.
The LED is encapsulated in clear epoxy plastic, providing protection and allowing efficient transmission of IR light.
It is suitable for applications in electronics manufacturing, instrumentation, communication devices, and sensing technologies.
The QEE113 model is manufactured in India.
This model supports through hole mounting, making it easy to integrate into various circuit designs.
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