STMicroelectronics MOSFET Gate Driver, 4 A Output Current, 36-Pin SO-36W Package, 3.1 V to 5.5 V Supply Voltage STGAP2SICDTR

STMicroelectronics STGAP2SICDTR is a dual MOSFET gate driver specifically designed to drive SiC MOSFETs for mid to high power applications. The device offers galvanic isolation between each gate driving channel and low voltage control circuitry, ensuring reliable operation in industrial environments. It supports a maximum output current of 4 A and operates within a supply voltage range of 3.1 V to 5.5 V. The gate driver is housed in a 36-pin SO-36W package, providing a compact solution suitable for power conversion and industrial motor driver inverters.

The STGAP2SICDTR features separated output pins allowing independent adjustment of turn-on and turn-off speeds using dedicated gate resistors. It integrates a Miller CLAMP function to prevent unwanted gate voltage spikes during fast switching events typical in half-bridge topologies. Protection mechanisms include undervoltage lockout (UVLO), thermal shutdown, and dedicated shutdown (SD) and brake pins to enhance system reliability.

This gate driver supports 3.3 V and 5 V TTL/CMOS inputs with hysteresis and offers a configurable interlocking function to avoid shoot-through conditions by preventing both outputs from being high simultaneously. This interlocking function can be disabled for independent channel operation. With an input-to-output propagation delay below 75 ns, it ensures precise PWM control, essential for industrial and power electronics applications.

Additionally, the device features a standby mode to minimize power consumption when not active and supports gate driving voltages up to 26 V. Typical use cases include power management for industrial motor drivers, inverters, and power conversion systems.

The STGAP2SICDTR gate driver combines performance, protection, and configurability, making it ideal for demanding power electronics tasks in industrial and commercial environments.

Dual isolated gate driver with 4 A current capability. Supports 3.1 V to 5.5 V supply voltages. Fast switching with 30 ns fall time and < 75 ns propagation delay. Over-temperature and undervoltage lockout protections integrated.

Standby function reduces idle power consumption. Configurable interlock to prevent shoot-through in half-bridge circuits. Explore a wide range of MOSFET Gate Drivers, power management ICs, and related industrial components on EnvMart for your projects and manufacturing needs.