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Infineon CoolMOS N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-220 IPP030N10N5AKSA1

Category Electronic Components Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 4.57mm
Length 10.36mm
Model IPP030N10N5AKSA1
Width 15.95mm
Mount Type Surface
Series CoolMOS
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 120A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 3mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 250W
Typical Gate Charge Qg @ Vgs 112nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.2V

Key Features

  • This MOSFET features a maximum continuous drain current of 120 A.
  • It is rated for a maximum drain-source voltage of 100 V, suitable for moderate voltage applications.
  • The device comes in a 3-pin TO-220 package, enabling effective heat dissipation.
  • Designed with an enhancement mode channel to ensure precise voltage-controlled operation.
  • Typical gate charge at 12 V gate source voltage is 112 nC, supporting fast switching.
  • Maximum power dissipation capacity of 250 W allows for robust thermal management.
  • Operating temperature range extends from -55 °C to a maximum of 175 °C.
  • The MOSFET has a low maximum drain-source resistance of 3 milliohms, minimizing power loss.

Product Description

Infineon IPP030N10N5AKSA1 CoolMOS N-Channel MOSFET is a high-quality metal oxide semiconductor field-effect transistor designed for power switching and amplification applications in various Electronic Components and power management circuits.

This device handles a maximum continuous drain current of 120 A and operates at a maximum drain-source voltage of 100 V, making it ideal for medium-power electronic industrial, HVAC, automotive, and manufacturing systems requiring efficient power control.

Housed in a 3-pin TO-220 package, the MOSFET ensures excellent heat dissipation, supporting high power dissipation up to 250 W. It features an enhancement mode N-channel with a maximum drain-source resistance of 3 milliohms, contributing to low conduction losses and improved efficiency.

The typical gate charge at a gate-source voltage of 12 V is 112 nC, enabling fast switching speeds critical in high-frequency power electronics. It operates reliably across a wide temperature range from -55 °C to 175 °C, supporting demanding industrial and automotive environments.

The forward voltage of 1.2 V further optimizes conduction efficiency. This MOSFET features a maximum continuous drain current of 120 A. It is rated for a maximum drain-source voltage of 100 V, suitable for moderate voltage applications.

The device comes in a 3-pin TO-220 package, enabling effective heat dissipation. Designed with an enhancement mode channel to ensure precise voltage-controlled operation. Typical gate charge at 12 V gate source voltage is 112 nC, supporting fast switching.

Maximum power dissipation capacity of 250 W allows for robust thermal management. Operating temperature range extends from -55 °C to a maximum of 175 °C. The MOSFET has a low maximum drain-source resistance of 3 milliohms, minimizing power loss.

Surface mount type allows for versatile PCB integration. Forward voltage is 1.2 V, providing efficient conduction.

The Infineon CoolMOS series is designed for use in industrial electronics, power supplies, automotive electronics, and HVAC systems, where reliable, fast, and efficient switching is critical.

Explore more Infineon semiconductor products and power management solutions on EnvMart for advanced industrial and commercial applications.

Infineon CoolMOS N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-220 IPP030N10N5AKSA1
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