STMicroelectronics STripFET N-Channel MOSFET, 2.4 A, 100 V, Enhancement Mode, 4-Pin SOT-223 STN2NF10

STMicroelectronics model STN2NF10 is a precision STripFET N-Channel MOSFET transistor optimized for switching and amplification in electronic circuits. Rated for a maximum continuous drain current of 2.4 A and a maximum drain-source voltage of 100 V, it is designed for applications requiring reliable medium power control in a compact 4-pin SOT-223 package.

This device operates in enhancement mode providing effective channel conduction on gate activation and supports a maximum power dissipation of 3.3 watts, allowing for efficient thermal management in industrial or commercial electronic systems.

With a typical gate charge of 10 nC and a gate-source voltage tolerance up to ±20 V, the STN2NF10 facilitates fast switching and robustness against voltage spikes. The MOSFET operates reliably over a wide temperature range from -55°C to 150°C, making it suitable for harsh environments including automotive electronics, power supplies, industrial controls, and consumer electronics.

The surface-mount SOT-223 package with 4 pins ensures ease of mounting and space-saving design on printed circuit boards. Low on-resistance of 260 mΩ minimizes conduction losses enhancing overall circuit efficiency.

Applications for this MOSFET include switching regulators, load switching, and motor control circuits in industrial, manufacturing, laboratory, and automotive sectors. Delivers a maximum continuous drain current of 2.4 amperes for efficient power handling.

Supports a maximum drain-source voltage of 100 volts suitable for medium voltage applications. Incorporates an enhancement mode N-channel channel type for improved switching performance. Equipped with a 4-pin SOT-223 surface-mount package ensuring compact and reliable PCB integration.

Features a low maximum drain-source resistance of 260 milliohms for reduced conduction losses. Handles maximum power dissipation of 3.3 watts to ensure thermal reliability. Operates within a temperature range from -55°C to a maximum of 150°C for durability in harsh environments.

Typical gate charge at Vgs is 10 nanocoulombs, facilitating high-speed switching. Provided with a maximum gate-source voltage rating of -20 to +20 volts ensuring robust gate protection. Physical dimensions include length of 6.5 mm, width of 3.5 mm, and height of 1.8 mm, suitable for compact electronic design.

STMicroelectronics continues to lead in producing reliable discrete semiconductor components like the STN2NF10, supporting designers and engineers in creating efficient and robust electronic products.

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