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ams OSRAM Metal Can TO18 Infrared and Visible Light Phototransistor 110° Angle BP 103

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ams OSRAM Metal Can TO18 Infrared and Visible Light Phototransistor 110° Angle BP 103

Name: ams OSRAM Metal Can TO18 Infrared and Visible Light Phototransistor 110° Angle BP 103
Brand: ams OSRAM
SKU: 125282
Price: 2.16 USD
Availability: InStock

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Category Phototransistor Brand ams OSRAM Condition New

Specifications

Country of Origin	India
Diameter	5.5mm
Brand	ams OSRAM
Height	3.6mm
Length	5.5mm
Model	BP 103
Width	5.5mm
Mount Type	Through Hole
Series	Metal Can TO18
Maximum Operating Temperature	80°C
Package Type	TO-18
Minimum Operating Temperature	-40°C
Number Of Channels	1
Standards/Approvals	ANSI/ESDA/JEDEC JS-001 (HBM,Class 2)
Number of Pins	3
Typical Fall Time	12μs
Peak Wavelength	850nm
Spectrums Detected	Infrared, Visible Light
Angle of Half Sensitivity	110 °
Collector Current	100mA
Maximum Light Current	80μA
Maximum Dark Current	50nA
Collector Emitter Voltage	35V
Emitter Collector Voltage	7V

Key Features

Metal Can TO-18 package provides durability and reliable through-hole mounting.
Detects infrared and visible light spectrums, ideal for diverse sensing applications.
Typical rise and fall time is 12 microseconds for fast response.
Peak wavelength detection is at 850 nm for infrared sensitivity.
Maximum light current capacity up to 80 microamperes ensures efficient detection.
Operating temperature range from -40°C to 80°C suits harsh environments.
Collector emitter voltage rated at 35 volts and emitter collector voltage at 7 volts.
The 3-pin configuration supports standard through-hole mounting techniques.

Product Description

ams OSRAM BP 103 is a high-performance phototransistor designed in a robust metal can TO-18 package. It is engineered to detect infrared and visible light spectrums, with a wide 110° angle of half sensitivity for broad signal reception. This component is ideal for industrial, laboratory, and electronic applications requiring precise light detection.

The phototransistor features a fast response, with typical rise and fall times of 12 microseconds, enabling efficient switching and detection in dynamic systems. Its peak wavelength sensitivity at 850 nm positions it as an excellent sensor for infrared applications including remote controls, optical switches, and automation.

Its 3-pin through-hole package facilitates easy mounting on PCBs with compact dimensions of 5.5 mm diameter and length, and 3.6 mm height. The device supports a maximum collector current of 100 mA and withstands collector emitter voltages up to 35 volts, allowing usage in various circuit designs requiring moderate voltage handling.

This phototransistor operates reliably across a wide temperature range from -40°C to 80°C, making it suitable for harsh operating environments. Additionally, it meets rigorous industry standards such as ANSI/ESDA/JEDEC JS-001 (HBM, Class 2), ensuring quality and electrostatic discharge resistance. The series is classified under Metal Can TO18 by ams OSRAM, known for durability and superior optical performance.

Applications include optoelectronic circuits, light sensing modules, proximity detection, and instrumentation in industrial controls, consumer electronics, automation systems, and security devices. Its precise optical characteristics and reliable construction make it a valuable component for advanced sensing solutions.

Metal Can TO-18 package provides durability and reliable through-hole mounting. Detects infrared and visible light spectrums for versatile applications. Fast rise and fall times (12 microseconds) for responsive detection.

Peak wavelength at 850 nm for infrared sensitivity. Maximum light current of 80 microamperes and collector current of 100 mA. Wide temperature operation range from -40°C to 80°C. Collector emitter voltage up to 35 V and emitter collector voltage rated at 7 V.

Compliant with ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) for ESD protection. Compact dimensions allow efficient PCB integration. Explore more Phototransistors and optoelectronic components from ams OSRAM at EnvMart to support your industrial, electronic, and laboratory requirements.

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Frequently Asked Questions

The peak wavelength sensitivity of this model is at 850 nm, making it suitable for infrared applications.

It can handle a maximum collector current of 100 mA, allowing for various circuit designs that require moderate current handling.

This phototransistor operates reliably across a temperature range from -40°C to 80°C, making it suitable for harsh environments.

It supports through-hole mounting, which facilitates easy integration into PCBs.

The dimensions of the TO-18 package are 5.5 mm in diameter and 3.6 mm in height.

The typical rise and fall time for this model is 12 microseconds, enabling fast response in detection applications.

It has a collector emitter voltage rating of 35 volts and an emitter collector voltage rating of 7 volts.

This unit can detect both infrared and visible light spectrums, making it versatile for various applications.

It features a 3-pin configuration, which is standard for through-hole mounting techniques.

It complies with ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) for electrostatic discharge protection.

The maximum light current capacity is up to 80 microamperes, ensuring efficient light detection.

It is suitable for applications such as optoelectronic circuits, light sensing modules, and proximity detection in various electronic and industrial systems.