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Vishay Silicon PIN Photodiode 60 V Maximum Reverse Voltage 70pF Capacitance Lead Mount BPW34S

Category PIN Diode Brand Vishay Condition New

Specifications

Country of Origin Philippines
Brand Vishay
Height 3.2mm
Length 5.4mm
Model BPW34S
Mount Type Lead
Series BPW34
Maximum Operating Temperature 100°C
Minimum Operating Temperature -40°C
Standards/Approvals WEEE 2002/96/EC, RoHS 2002/95/EC, JEDEC JS709A
Diode Configuration Series
Maximum Capacitance 70pF
Maximum Reverse Voltage Vr 60V

Key Features

  • The photodiode has a photocurrent rating of 70μA and peak wavelength rating of 900nm.
  • Compact dimensions measuring 5.4mm length, 4.3mm width, and 3.2mm height.
  • Leaded mount type with top view clear plastic package for efficient light detection.
  • Operates reliably within a temperature range of -40°C to 100°C.
  • Compliant with WEEE 2002/96/EC, RoHS 2002/95/EC, and JEDEC JS709A standards.
  • Designed for visible and near-infrared radiation sensing with a radiant sensitive area of 7.5mm².
  • Fast response time and high photo sensitivity for precision applications.
  • Manufactured in the Philippines ensuring quality and reliability.

Product Description

Vishay BPW34S Silicon PIN Photodiode is a high-performance photodetector designed for applications requiring quick response and high sensitivity. This diode is rated for a maximum reverse voltage of 60 V and a maximum capacitance of 70pF, making it suitable for various industrial and laboratory semiconductor detection systems. Its compact size with dimensions of 5.4mm length, 4.3mm width, and 3.2mm height allows easy integration into electronic circuits.

The device features a leaded mounting type in a miniature, flat, top view, and clear plastic package, providing excellent radiant sensitivity with a 7.5mm² sensitive area. Its peak wavelength response reaches up to 900nm, effectively detecting visible and near-infrared radiations.

Operating temperature ranges from -40°C to 100°C ensure that the BPW34S performs reliably in harsh environmental conditions. The photodiode is compliant with important industry standards such as WEEE 2002/96/EC, RoHS 2002/95/EC, and JEDEC JS709A, guaranteeing environmentally responsible and safe usage.

The photodiode has a photocurrent rating of 70μA and peak wavelength rating of 900nm. Compact dimensions measuring 5.4mm length, 4.3mm width, and 3.2mm height. Leaded mount type with top view clear plastic package for efficient light detection.

Operates reliably within a temperature range of -40°C to 100°C. Compliant with WEEE 2002/96/EC, RoHS 2002/95/EC, and JEDEC JS709A standards. Designed for visible and near-infrared radiation sensing with a radiant sensitive area of 7.5mm².

Fast response time and high photo sensitivity for precision applications. Manufactured in the Philippines ensuring quality and reliability.

Suitable for use in electronic components, power connectors, discrete semiconductors, and semiconductor detection systems across industries including industrial, laboratory, electronics manufacturing, and research laboratories. The Vishay BPW34S is engineered to deliver consistent performance and high reliability in demanding operational environments.

Explore a broad range of photodiodes and semiconductor products in EnvMart’s Electronics & Electricals category for comprehensive solutions.

Explore more products in our PIN Diode category.

Vishay Silicon PIN Photodiode 60 V Maximum Reverse Voltage 70pF Capacitance Lead Mount BPW34S
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Frequently Asked Questions

The maximum reverse voltage for this photodiode is 60 V.

It has a maximum capacitance rating of 70 pF.

The dimensions are 5.4 mm in length, 4.3 mm in width, and 3.2 mm in height.

This model operates reliably within a temperature range of -40°C to 100°C.

The peak wavelength response of this photodiode is 900 nm, suitable for detecting visible and near-infrared radiation.

It features a leaded mounting type in a miniature, flat, top view, and clear plastic package.

This photodiode is compliant with WEEE 2002/96/EC, RoHS 2002/95/EC, and JEDEC JS709A standards.

The photocurrent rating for the BPW34S is 70 μA.

It is designed for applications requiring quick response and high sensitivity, including semiconductor detection systems.

This photodiode is manufactured in the Philippines.

The radiant sensitive area of this model is 7.5 mm².

The BPW34S features a series diode configuration.

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