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Nexperia Digital NPN Transistor 100 mA 50 V 3-Pin SOT-323 PDTC123YU,115

Category Digital Transistor Brand Nexperia Condition New

Specifications

Country of Origin Malaysia
Brand Nexperia
Height 1.1mm
Length 2.2mm
Model PDTC123YU,115
Width 1.35mm
Mount Type Surface
Series PDTC123Y
Maximum Operating Temperature 150°C
Package Type SOT-323
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 35
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 50V
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single

Key Features

  • Designed for digital switching applications with integrated bias resistors.
  • Maximum power dissipation rated at 200 mW to support efficient thermal management.
  • Wide operating temperature range from -65°C up to 150°C suitable for various environments.
  • Compact dimensions of 2.2 mm length, 1.35 mm width, and 1.1 mm height optimized for PCB space saving.
  • Surface mount SOT-323 package with 3 pins allowing easy automated assembly.
  • Minimum DC current gain (hFE) of 35 ensures sufficient amplification in switching circuits.
  • Maximum emitter base voltage of 5 V supports stability in biasing conditions.
  • Manufactured in Malaysia ensuring quality and performance compliance.

Product Description

Nexperia PDTC123YU,115 digital transistor is a single NPN configuration transistor designed for digital switching and amplification in electronic circuits. It comes with integrated bias resistors, facilitating direct drive from digital sources. This transistor is housed in a low-profile SOT-323 3-pin surface mount package, making it ideal for compact circuit boards in applications ranging from automotive electronics to general-purpose digital logic.

This transistor supports a maximum DC collector current of 100 mA and can handle collector emitter voltages up to 50 V. Its power dissipation capacity of 200 mW ensures dependable thermal performance under typical operating conditions. It delivers a guaranteed minimum DC current gain of 35, which provides reliable amplification and switching speed in digital circuits.

The wide operational temperature range from -65°C to 150°C allows use in harsh environments and various industrial applications. With precise physical dimensions (2.2 mm length, 1.35 mm width, and 1.1 mm height), it optimizes space on printed circuit boards without compromising functionality.

Designed for digital switching applications with integrated bias resistors. Maximum power dissipation rated at 200 mW supports effective thermal management. Wide operating temperature range from -65°C up to 150°C for robust performance.

Compact SOT-323 3-pin surface mount package for high-density PCB layouts. Minimum DC current gain (hFE) of 35 enabling reliable transistor performance. Maximum emitter base voltage of 5 V providing bias stability. Manufactured in Malaysia to meet high-quality standards.

This digital transistor is suitable for use in a variety of electronic equipment, including industrial automation, automotive electronics systems, consumer electronics, and communication devices. It simplifies design requirements and reduces component count by integrating bias resistors internally, enhancing circuit reliability and assembly efficiency.

Browse EnvMart's category for Digital Transistors from leading manufacturers to explore advanced semiconductor components that meet demanding industrial and laboratory requirements.

Nexperia Digital NPN Transistor 100 mA 50 V 3-Pin SOT-323 PDTC123YU,115
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA, making it suitable for various digital applications.

It operates within a wide temperature range from -65°C to 150°C, allowing use in diverse environments.

This model is housed in a SOT-323 surface mount package, which is designed for compact PCB layouts.

The guaranteed minimum DC current gain (hFE) is 35, ensuring reliable amplification in switching circuits.

The dimensions are 2.2 mm in length, 1.35 mm in width, and 1.1 mm in height, optimizing space on circuit boards.

The maximum power dissipation is rated at 200 mW, supporting effective thermal management during operation.

It can handle a maximum collector-emitter voltage of 50 V, providing stability in various applications.

This is a single NPN configuration transistor, designed for digital switching and amplification.

The maximum emitter-base voltage (VEBO) is 5 V, which supports stability in biasing conditions.

It is manufactured in Malaysia, ensuring compliance with quality standards.

This model is suitable for various applications, including industrial automation, automotive electronics, and consumer electronics.

The PDTC123YU,115 features a 3-pin configuration, facilitating easy automated assembly.

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