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Infineon NOR Flash Memory 128MB CFI, Parallel Interface, 56-Pin TSOP Package S29GL128P90TFIR20

Category Flash Memory Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.05mm
Length 14.1mm
Cell Type NOR
Model S29GL128P90TFIR20
Width 14.1mm
Mount Type Surface
Series S29GL128P
Maximum Operating Temperature 85°C
Package Type TSOP
Minimum Operating Temperature -40°C
Memory size 128MB
Interface Type CFI, Parallel
Pin Count 56
Maximum Supply Voltage 3.6V
Minimum Supply Voltage 3V
Supply Current 110mA
Organisation 8M x 16 Bit
Number of Bits per Word 16
Maximum Random Access Time 90ns
Number of Words 8K
Timing Type Asynchronous

Key Features

  • Provides non-volatile memory storage for program and data retention.
  • Features a parallel interface for asynchronous data timing.
  • Supports operating temperatures from -40°C to 85°C for robust industrial use.
  • Operates at supply voltages ranging from 3V to 3.6V.
  • Includes 110mA supply current with a maximum random access time of 90ns.
  • Compact 14.1mm x 14.1mm x 1.05mm TSOP package for efficient PCB mounting.
  • Utilizes NOR cell technology to enable block-based erase and write operations.
  • Ideal for embedded applications requiring reliable program storage with limited write cycles.

Product Description

Infineon S29GL128P90TFIR20 is a NOR Flash Memory device with 128MB storage, designed with a CFI parallel interface and housed in a 56-pin TSOP package. It operates asynchronously with a supply voltage range of 3 to 3.6 volts, making it suitable for various electronic applications.

The memory IC features a compact form factor of 14.1mm length, 14.1mm width, and 1.05mm height, enabling easy surface mounting on PCBs. Its operating temperature range from -40°C to 85°C allows reliable performance across industrial and environmental conditions.

This flash memory uses NOR cell architecture, which facilitates block-wise erase and write, suitable for program storage with limited update cycles. It draws a supply current of 110mA and offers a maximum random access time of 90ns for efficient data retrieval.

Typical applications of the S29GL128P90TFIR20 include embedded systems, automotive electronics, industrial controls, and other environments requiring dependable non-volatile memory.

Non-volatile program storage with 128MB capacity. Asynchronous parallel interface for high-speed access. Wide operating temperature range supports industrial standards. Compact TSOP 56-pin package for surface mounting. Low supply voltage of 3 to 3.6V for power efficiency.

Reliable NOR flash technology enables block erase functionality. Suitable for embedded, automotive, and industrial applications. Explore more semiconductor Flash Memory products at EnvMart for industrial and electronic design requirements.

Infineon NOR Flash Memory 128MB CFI, Parallel Interface, 56-Pin TSOP Package S29GL128P90TFIR20
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Frequently Asked Questions

This model has a storage capacity of 128MB, providing non-volatile memory for program and data retention.

It supports an operating temperature range from -40°C to 85°C, making it suitable for robust industrial applications.

This unit features a CFI parallel interface, allowing for asynchronous data timing.

The dimensions of the TSOP package are 14.1mm in length, 14.1mm in width, and 1.05mm in height.

It operates at supply voltages ranging from 3V to 3.6V, allowing for power efficiency in various applications.

The maximum random access time is 90ns, facilitating efficient data retrieval.

It includes a supply current of 110mA, which is important for power management in electronic designs.

It utilizes NOR cell technology, which enables block-based erase and write operations.

This model supports 16 bits per word, allowing for efficient data organization.

The device features a pin count of 56, suitable for various electronic applications.

It is designed for surface mounting, enabling efficient PCB integration.

Typical applications include embedded systems, automotive electronics, and industrial controls, where reliable non-volatile memory is required.

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