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Infineon Reverse Conducting Drive IKN03N60RC2ATMA1, 3 A 600 V PG-SOT223
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IKN03N60RC2ATMA1 |
| Maximum Operating Temperature | 150°C |
| Package Type | PG-SOT223 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Maximum Continuous Collector Current Ic | 3A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V |
| Maximum Power Dissipation Pd | 5.1W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- This reverse conducting drive offers enhanced controllability and reliability with a monolithically integrated diode.
- Supports a maximum power dissipation of 5.1 W, suitable for efficient power management.
- Operates reliably within a temperature range from -40°C to 150°C, ensuring durability in varying environments.
- Features a maximum gate emitter voltage of 20 V and a maximum collector emitter saturation voltage of 2.3 V.
- RoHS compliant, meeting environmental standards for electronic components.
- Designed for use in industrial electronics and power control applications requiring robust and efficient switching devices.
- Ideal for applications in manufacturing automation, automotive electronics, and power supply systems.
Product Description
The Infineon IKN03N60RC2ATMA1 Reverse Conducting Drive is a discrete semiconductor device designed for advanced power control solutions. Featuring a maximum continuous collector current of 3 A and a high collector emitter voltage rating of 600 V, it is packaged in a compact PG-SOT223 package. This device integrates a reverse conduction diode monolithically, which improves its performance, controllability, and reliability over previous designs such as the RC-DF series.
With a maximum power dissipation of 5.1 W, the device efficiently manages heat during operation, making it suitable for continuous use in demanding electrical systems. It operates within a broad temperature range, from -40°C minimum to 150°C maximum, ensuring stable performance in harsh industrial and automotive environments.
Key voltage parameters include a maximum gate emitter voltage of 20 V and a maximum collector emitter saturation voltage of 2.3 V, enabling precise switching and control in power electronic circuits.
This RoHS-compliant component meets stringent environmental directives, making it suitable for modern manufacturing with compliance to sustainability standards. This reverse conducting drive offers enhanced controllability and reliability with a monolithically integrated diode.
Supports a maximum power dissipation of 5.1 W, suitable for efficient power management. Operates reliably within a temperature range from -40°C to 150°C, ensuring durability in varying environments. Features a maximum gate emitter voltage of 20 V and a maximum collector emitter saturation voltage of 2.3 V.
RoHS compliant, meeting environmental standards for electronic components. Designed for use in industrial electronics and power control applications requiring robust and efficient switching devices. Ideal for applications in manufacturing automation, automotive electronics, and power supply systems.
This product is particularly suited for applications in industrial automation, automotive electronic controls, power converters, and other power management devices. The compact PG-SOT223 package allows for ease of integration onto circuit boards with high reliability and durability.
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Frequently Asked Questions
The maximum continuous collector current for this model is 3 A.
It has a maximum collector emitter voltage rating of 600 V.
The maximum power dissipation supported by this unit is 5.1 W.
This model operates reliably within a temperature range from -40°C to 150°C.
The maximum gate emitter voltage for the IKN03N60RC2ATMA1 is 20 V.
The maximum collector emitter saturation voltage is 2.3 V.
It is packaged in a compact PG-SOT223 package.
Yes, this component is RoHS compliant, meeting environmental standards for electronic components.
This model is designed for use in industrial electronics, automotive electronics, and power supply systems.
Key features include enhanced controllability, reliability with a monolithically integrated diode, and efficient power management.
The country of origin for this model is India.
It is particularly suited for applications in manufacturing automation, automotive electronic controls, and power converters.
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