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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IKN03N60RC2ATMA1 |
| Maximum Operating Temperature | 150°C |
| Package Type | PG-SOT223 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Maximum Continuous Collector Current Ic | 3A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V |
| Maximum Power Dissipation Pd | 5.1W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Infineon IKN03N60RC2ATMA1 Reverse Conducting Drive is a high-quality IGBT discrete transistor designed to handle a maximum continuous collector current of 3 amperes and a maximum collector-emitter voltage of 600 volts. Packaged in a PG-SOT223 package, it integrates a monolithic diode to provide enhanced performance, controllability, and reliability compared to previous versions.
The device has a maximum power dissipation of 5.1 watts and operates efficiently within a temperature range from -40°C to 150°C, making it suitable for demanding industrial and electronic applications.
With a maximum gate-emitter voltage of 20 volts and a collector-emitter saturation voltage of 2.3 volts, the transistor ensures safe switching and low loss conduction. This make it a reliable component for power management in various sectors including industrial automation, HVAC systems, manufacturing machinery, and power supply circuits.
The reverse conducting feature enhances circuit protection and simplifies design by integrating a diode monolithically. The PG-SOT223 package supports effective heat dissipation, critical for prolonged device operation.
The product complies with RoHS environmental standards but is not specified for automotive standard usage, making it suitable mostly for general industrial and electronic component use.
The device supports a maximum continuous collector current of 3 amperes. It sustains a maximum collector-emitter voltage of 600 volts for high voltage operations. The integrated diode improves performance and reliability in switching circuits.
The package type PG-SOT223 provides enhanced thermal dissipation. The maximum power dissipation rating is 5.1 watts for efficient heat management. Operating temperature ranges from -40°C to 150°C, suitable for harsh environments.
The gate-emitter voltage maximum rating is 20 volts for safe gate control. The collector-emitter saturation voltage maximum is 2.3 volts ensuring low conduction losses. This product complies with RoHS standards ensuring environmental safety.
The reverse conducting drive is ideal for industrial control, power electronics, and manufacturing equipment applications. Explore more Infineon IGBT digital components and discrete semiconductor devices on EnvMart for industrial, laboratory, and commercial uses.
Explore more products in our IGBTs category.
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