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Vishay P-Channel Enhancement MOSFET, 1.9 A, 200 V, 3-Pin TO-220 IRFI9620GPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 16.12mm |
| Length | 10.63mm |
| Model | IRFI9620GPBF |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | IRFI |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.9A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 1.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 30W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -6.3V |
Key Features
- Type P channel designed for enhancement mode operation.
- Maximum continuous drain current of 1.9 amperes.
- Maximum drain-source voltage rating of 200 volts.
- 3-pin TO-220 through-hole mounting for reliable PCB integration.
- Maximum power dissipation of 30 watts for robust performance.
- Operating temperature range from -55°C to 150°C for versatile applications.
- Typical gate charge of 15 nanocoulombs at Vgs for efficient switching.
- Maximum gate-source voltage of -20 to +20 volts ensuring device safety.
Product Description
Vishay IRFI9620GPBF is a P-Channel enhancement mode MOSFET designed for discrete semiconductor applications requiring moderate current and voltage ratings. It offers a maximum continuous drain current of 1.9 A and a drain-source voltage rating up to 200 V, making it suitable for power management and switching applications.
The package type is a 3-pin TO-220, supporting through-hole mounting methods for easy PCB assembly in industrial and commercial electronic devices. Its compact dimensions of 16.12 mm in height, 10.63 mm in length, and 4.83 mm in width ensure convenient integration even in space-constrained designs.
This MOSFET operates efficiently across a temperature range from -55°C to 150°C, providing reliability in demanding environments. The typical gate charge of 15 nC under Vgs conditions allows for fast switching performance, and a maximum gate-source voltage of ±20 V protects the device from gate overvoltage.
With a maximum power dissipation of 30 W and a forward voltage of -6.3 V, the IRFI9620GPBF is ideal for use in power supply regulation, motor control circuits, and other discrete semiconductor applications within industrial, automotive, laboratory, and manufacturing environments.
Type P channel designed for enhancement mode operation. Maximum continuous drain current of 1.9 amperes. Maximum drain-source voltage rating of 200 volts. 3-pin TO-220 through-hole mounting for reliable PCB integration. Maximum power dissipation of 30 watts for robust performance.
Operating temperature range from -55°C to 150°C for versatile applications. Typical gate charge of 15 nanocoulombs at Vgs for efficient switching. Maximum gate-source voltage of -20 to +20 volts ensuring device safety. Compact device dimensions: height 16.12 mm, length 10.63 mm, width 4.83 mm.
Forward voltage of -6.3 volts optimized for various electronic circuits.
This product is manufactured in China and adheres to quality standards for electronic components. It is suited for industrial, commercial, laboratory, and electronic design applications requiring reliable MOSFET transistors.
Explore more Vishay power semiconductor devices and similar MOSFET components available on EnvMart for your electronic design and repair needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1.9 A.
It has a maximum drain-source voltage rating of 200 V.
The dimensions are 16.12 mm in height, 10.63 mm in length, and 4.83 mm in width.
This model comes in a 3-pin TO-220 package type suitable for through-hole mounting.
The operating temperature range is from -55°C to 150°C.
The typical gate charge is 15 nanocoulombs at Vgs.
The maximum gate-source voltage is ±20 V.
It has a maximum power dissipation of 30 W.
This MOSFET features a P-channel design for enhancement mode operation.
The forward voltage is -6.3 V.
It is suitable for power supply regulation, motor control circuits, and other discrete semiconductor applications.
This product is manufactured in China.
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